A novel micro-accelerometer with adjustable sensitivity based on resonant tunneling diodes
Xiong Ji-Jun(熊继军)a)†, Mao Hai-Yang(毛海央)b), Zhang Wen-Dong(张文栋)a), and Wang Kai-Qun(王楷群)a)
aKey Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education, North University of China, Taiyuan 030051, China; bInstitute of Microelectronics, Peking University, Beijing 100871, China
Abstract Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.
Received: 15 June 2008
Revised: 08 August 2008
Accepted manuscript online:
PACS:
85.30.Mn
(Junction breakdown and tunneling devices (including resonance tunneling devices))
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project supported in part by the
National Natural Science Foundation of China (Grant No 50775209),
the Fork Ying Tung Education Foundation (Grant No 101052) and
Program for Excellent Talents by Ministry of Education of China.
Cite this article:
Xiong Ji-Jun(熊继军), Mao Hai-Yang(毛海央), Zhang Wen-Dong(张文栋), and Wang Kai-Qun(王楷群) A novel micro-accelerometer with adjustable sensitivity based on resonant tunneling diodes 2009 Chin. Phys. B 18 1242
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