Abstract A direct method is proposed to quantitatively characterize the structural depth profiles emerged in the polycrystalline thin films based on the information obtained by X-ray diffraction (XRD) with various incident angles and treated by a numerical procedure known as the constrained linear inversion. It should be noted that the proposed method was neither sensitive to the random noise appearing in experiment nor to the error originated from the measured thickness of the specimen. To testify the validity of the method, XRD measurements were carried out on a specially designed Pd/Ag bilayer sample, which was annealed at 490℃ for 20 min, and the depth profiles were accordingly calculated through resolving the obtained XRD patterns. The elemental concentration depth profile of the Pd/Ag bilayer sample was in turn calculated from the resolved patterns, which was in good agreement with those obtained by Auger electron analysis on the annealed sample.
Study on the nitridation of β-Ga2O3 films Fei Cheng(程菲), Yue-Wen Li(李悦文), Hong Zhao(赵红), Xiang-Qian Xiu(修向前), Zhi-Tai Jia(贾志泰), Duo Liu(刘铎), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2019, 28(8): 088103.