Determination of conduction band edge characteristics of strained Si/Si1-xGex
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials
and Devices, School of Microelectronics, Xidian University, Xi'an
710071, China
Abstract The feature of conduction band (CB) of Tensile-Strained
Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated,
including the number of equivalent CB edge energy extrema, CB
energy minima,
the position of the extremal point, and effective mass. Based on an analysis
of symmetry under strain, the number of equivalent CB edge energy extrema is
presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion
relation near minima of CB bottom energy, derived
from the linear deformation potential
theory, is determined, from which the parameters, namely, the
position of the extremal point, and the longitudinal and transverse masses
($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.
Published: 20 December 2007
PACS:
73.20.At
(Surface states, band structure, electron density of states)
(Fermi surface: calculations and measurements; effective mass, g factor)
Fund: Project supported by the
National Defence Pre-research Foundation of China (Grant
Nos~51308040203 and 51408061105DZ0171).
Cite this article:
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi Determination of conduction band edge characteristics of strained Si/Si1-xGex 2007 Chin. Phys. 16 3827
Epitaxial fabrication of monolayer copper arsenide on Cu(111) Shuai Zhang(张帅), Yang Song(宋洋), Jin Mei Li(李金梅), Zhenyu Wang(王振宇), Chen Liu(刘晨), Jia-Ou Wang(王嘉鸥), Lei Gao(高蕾), Jian-Chen Lu(卢建臣), Yu Yang Zhang(张余洋), Xiao Lin(林晓), Jinbo Pan(潘金波), Shi Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2020, 29(7): 077301.
