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Chin. Phys., 2007, Vol. 16(12): 3827-3831    DOI: 10.1088/1009-1963/16/12/045

Determination of conduction band edge characteristics of strained Si/Si1-xGex

Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses ($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.
Keywords:  conduction-band      K\cdotP method      strained Si/Si_{1 - x}Ge_{x}  
Published:  20 December 2007
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  71.15.-m (Methods of electronic structure calculations)  
  71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)  
Fund: Project supported by the National Defence Pre-research Foundation of China (Grant Nos~51308040203 and 51408061105DZ0171).

Cite this article: 

Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi Determination of conduction band edge characteristics of strained Si/Si1-xGex 2007 Chin. Phys. 16 3827

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