A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
Ma Long(马龙)a)†, Huang Ying-Long(黄应龙)b), Zhang Yang(张杨)c), Yang Fu-Hua(杨富华)a)b), and Wang Liang-Chen(王良臣)a)
a Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.
Received: 15 March 2006
Revised: 07 April 2006
Accepted manuscript online:
Fund: Project supported by the
National High Technology Research and Development Program of China
(Grant No 2003AA302750).
Cite this article:
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣) A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 2006 Chinese Physics 15 2422
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