Abstract This paper reports the stability of GaAs/AlGaAs superlattice structures after theorem annealing, Zn diffusion and MeV Si+ ion implantation. The MeV Si+ ion implantation induced damage in GaAs/AlGaAs superlattices, its annealing properties, and the effects on superlattice structure stability are reported as well. Thermal annealing at 650℃ for 30min has little effect on superlattice structure. Zn diffusion may induce superlattice layer disordering. And annealing at 650℃ for 30min can eliminate damage caused by 2.3MeV,1.5×1015 cm-2 Si+ ion implantation, which cannot induce superlattice layer disordering.
Received: 10 November 1993
Accepted manuscript online:
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