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Investigation of active-region doping on InAs/GaSb long wave infrared detectors |
| Su-Ning Cui(崔素宁)1,2, Dong-Wei Jiang(蒋洞微)1,2,4, Ju Sun(孙矩)1,2, Qing-Xuan Jia(贾庆轩)1,2, Nong Li(李农)1,2, Xuan Zhang(张璇)1,2, Yong Li(李勇)1,3, Fa-Ran Chang(常发冉)1, Guo-Wei Wang(王国伟)1,2,4, Ying-Qiang Xu(徐应强)1,2,4, Zhi-Chuan Niu(牛智川)1,2,4,5 |
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Energy and Environment Science, Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology(Ministry of Education), Provincial Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650092, China;
4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
5 Beijing Academy of Quantum Information Sciences, Beijing 100193, China |
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Abstract The eight-band k·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5 μm, and the best composition of M-structure in this type of device is calculated theoretically. In addition, we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device. The results show that the modest active region doping temperature (Be: 760℃) can improve the quantum efficiency of the device with the best performance, while excessive doping (Be: >760℃) is not conducive to improving the photo response. With the best designed structure and an appropriate doping concentration, a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688 Ω·cm2, corresponding to a maximum detectivity of 7.35×1011 cm·Hz3/W.
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Received: 28 October 2019
Revised: 22 January 2020
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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68.65.Cd
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(Superlattices)
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02.70.-c
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(Computational techniques; simulations)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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| Fund: Project supported by the National Key Technology R&D Program of China (Grant No. 2018YFA0209104), the Key R&D Program of Guangdong Province, China (Grant No. 2018B030329001), and the Major Program of the National Natural Science Foundation of China (Grant No. 61790581). |
Corresponding Authors:
Guo-Wei Wang, Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn;wangguowei@semi.ac.cn
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Cite this article:
Su-Ning Cui(崔素宁), Dong-Wei Jiang(蒋洞微), Ju Sun(孙矩), Qing-Xuan Jia(贾庆轩), Nong Li(李农), Xuan Zhang(张璇), Yong Li(李勇), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) Investigation of active-region doping on InAs/GaSb long wave infrared detectors 2020 Chin. Phys. B 29 048502
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