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Other articles related with "threshold voltage"：
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128502 |
Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进) |
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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process |
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Chin. Phys. B
2023 Vol.32 (12): 128502-128502
[Abstract]
(126)
[HTML 0 KB]
[PDF 823 KB]
(35)
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37302 |
Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需) |
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Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor |
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Chin. Phys. B
2023 Vol.32 (3): 37302-037302
[Abstract]
(320)
[HTML 1 KB]
[PDF 867 KB]
(260)
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18506 |
Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢) |
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Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices |
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Chin. Phys. B
2023 Vol.32 (1): 18506-018506
[Abstract]
(410)
[HTML 1 KB]
[PDF 683 KB]
(165)
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96101 |
Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)† |
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Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs |
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Chin. Phys. B
2022 Vol.31 (9): 96101-096101
[Abstract]
(344)
[HTML 0 KB]
[PDF 5583 KB]
(161)
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56107 |
Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟) |
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Combined effects of cycling endurance and total ionizing dose on floating gate memory cells |
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Chin. Phys. B
2022 Vol.31 (5): 56107-056107
[Abstract]
(360)
[HTML 1 KB]
[PDF 1359 KB]
(66)
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17304 |
Liangliang Guo(郭亮良), Yuming Zhang(张玉明), Suzhen Luan(栾苏珍), Rundi Qiao(乔润迪), and Renxu Jia(贾仁需) |
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Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure |
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Chin. Phys. B
2022 Vol.31 (1): 17304-017304
[Abstract]
(432)
[HTML 0 KB]
[PDF 820 KB]
(94)
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87305 |
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure |
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Chin. Phys. B
2021 Vol.30 (8): 87305-087305
[Abstract]
(534)
[HTML 1 KB]
[PDF 830 KB]
(180)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(477)
[HTML 1 KB]
[PDF 790 KB]
(162)
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47103 |
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) |
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Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor |
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Chin. Phys. B
2021 Vol.30 (4): 47103-
[Abstract]
(373)
[HTML 1 KB]
[PDF 2118 KB]
(114)
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47304 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃) |
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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs |
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Chin. Phys. B
2020 Vol.29 (4): 47304-047304
[Abstract]
(639)
[HTML 1 KB]
[PDF 753 KB]
(180)
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18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
(609)
[HTML 1 KB]
[PDF 1276 KB]
(164)
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17303 |
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) |
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Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors |
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Chin. Phys. B
2019 Vol.28 (1): 17303-017303
[Abstract]
(758)
[HTML 1 KB]
[PDF 528 KB]
(208)
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97308 |
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Characteristics and threshold voltage model of GaN-based FinFET with recessed gate |
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Chin. Phys. B
2018 Vol.27 (9): 97308-097308
[Abstract]
(811)
[HTML 1 KB]
[PDF 804 KB]
(229)
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118501 |
Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌) |
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Analytical threshold voltage model for strained silicon GAA-TFET |
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Chin. Phys. B
2016 Vol.25 (11): 118501-118501
[Abstract]
(752)
[HTML 0 KB]
[PDF 354 KB]
(318)
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108503 |
Shweta Tripathi |
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A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET |
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Chin. Phys. B
2016 Vol.25 (10): 108503-108503
[Abstract]
(613)
[HTML 1 KB]
[PDF 5433 KB]
(683)
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47305 |
Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰) |
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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect |
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Chin. Phys. B
2016 Vol.25 (4): 47305-047305
[Abstract]
(700)
[HTML 1 KB]
[PDF 663 KB]
(620)
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38502 |
Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才) |
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Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs |
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Chin. Phys. B
2016 Vol.25 (3): 38502-038502
[Abstract]
(723)
[HTML 1 KB]
[PDF 339 KB]
(304)
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106102 |
Guan Rong-Hua (关荣华), Ye Wen-Jiang (叶文江), Xing Hong-Yu (邢红玉) |
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Influences of surface and flexoelectric polarization on the effective anchoring energy in nematic liquid crystal |
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Chin. Phys. B
2015 Vol.24 (10): 106102-106102
[Abstract]
(610)
[HTML 1 KB]
[PDF 347 KB]
(297)
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57702 |
Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) |
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Threshold switching uniformity in In2Se3 nanowire-based phase change memory |
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Chin. Phys. B
2015 Vol.24 (5): 57702-057702
[Abstract]
(596)
[HTML 1 KB]
[PDF 684 KB]
(419)
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37303 |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (3): 37303-037303
[Abstract]
(768)
[HTML 0 KB]
[PDF 304 KB]
(482)
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118505 |
Shweta Tripathi |
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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET |
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Chin. Phys. B
2014 Vol.23 (11): 118505-118505
[Abstract]
(645)
[HTML 1 KB]
[PDF 332 KB]
(437)
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77102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) |
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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode |
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Chin. Phys. B
2013 Vol.22 (7): 77102-077102
[Abstract]
(864)
[HTML 1 KB]
[PDF 270 KB]
(1492)
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28503 |
Wang Bin (王斌), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Zhang Yu-Ming (张玉明), Zhou Chun-Yu (周春宇), Wang Guan-Yu (王冠宇), Li Yu-Chen (李妤晨 ) |
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Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET |
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Chin. Phys. B
2013 Vol.22 (2): 28503-028503
[Abstract]
(835)
[HTML 1 KB]
[PDF 390 KB]
(1312)
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107306 |
Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙) |
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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs |
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Chin. Phys. B
2012 Vol.21 (10): 107306-107306
[Abstract]
(1028)
[HTML 1 KB]
[PDF 197 KB]
(978)
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57304 |
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) |
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A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures |
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Chin. Phys. B
2012 Vol.21 (5): 57304-057304
[Abstract]
(1638)
[HTML 1 KB]
[PDF 180 KB]
(2174)
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
(1673)
[HTML 1 KB]
[PDF 838 KB]
(1069)
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117309 |
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌) |
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An analytical threshold voltage model for dual-strained channel PMOSFET |
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Chin. Phys. B
2010 Vol.19 (11): 117309-117309
[Abstract]
(1249)
[HTML 0 KB]
[PDF 694 KB]
(892)
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5479 |
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) |
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Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature |
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Chin. Phys. B
2009 Vol.18 (12): 5479-5484
[Abstract]
(1619)
[HTML 1 KB]
[PDF 169 KB]
(976)
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238 |
Ye Wen-Jiang(叶文江), Xing Hong-Yu(邢红玉), Yang Guo-Chen(杨国琛), and Yuan Meng-Yao(苑梦尧) |
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Threshold property of a nematic liquid crystal cell with two grating surface substrates |
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Chin. Phys. B
2009 Vol.18 (1): 238-245
[Abstract]
(1197)
[HTML 1 KB]
[PDF 568 KB]
(923)
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1887 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Jiang Wei-Wei(姜薇薇), Song Dan-Dan(宋丹丹), Zhu Hai-Na(朱海娜), Li Shao-Yan(李少彦), Huang Jin-Ying(黄金英), Huang Hao(黄豪), and Xu Xu-Rong(徐叙瑢) |
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Characteristics of pentacene organic thin film transistor with top gate and bottom contact |
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Chin. Phys. B
2008 Vol.17 (5): 1887-1892
[Abstract]
(1492)
[HTML 1 KB]
[PDF 269 KB]
(975)
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1757 |
Ji Feng (季峰), Xu Jing-Ping(徐静平), and Lai Pui-To (黎沛涛) |
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A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect |
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Chin. Phys. B
2007 Vol.16 (6): 1757-1763
[Abstract]
(1386)
[HTML 1 KB]
[PDF 509 KB]
(595)
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821 |
Chen Hai-Feng(陈海峰), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Li Kang(李康), and Ni Jin-Yu(倪金玉) |
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Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress |
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Chin. Phys. B
2007 Vol.16 (3): 821-825
[Abstract]
(1622)
[HTML 1 KB]
[PDF 489 KB]
(749)
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565 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦) |
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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET |
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Chin. Phys. B
2005 Vol.14 (3): 565-570
[Abstract]
(1294)
[HTML 1 KB]
[PDF 279 KB]
(970)
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1815 |
Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜) |
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Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET |
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Chin. Phys. B
2004 Vol.13 (11): 1815-1819
[Abstract]
(1165)
[HTML 1 KB]
[PDF 212 KB]
(416)
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