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Other articles related with "responsivity":
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57301 |
Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华) |
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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film |
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Chin. Phys. B
2021 Vol.30 (5): 57301-057301
[Abstract]
(533)
[HTML 1 KB]
[PDF 2894 KB]
(225)
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38502 |
Heng Yue(岳恒), Anqi Hu(胡安琪), Qiaoli Liu(刘巧莉), Huijun Tian(田慧军), Chengri Hu(胡成日), Xiansong Ren(任显松), Nianyu Chen(陈年域), Chen Ge(葛琛), Kuijuan Jin(金奎娟), and Xia Guo(郭霞) |
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Graphene/SrTiO3 interface-based UV photodetectors with high responsivity |
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Chin. Phys. B
2021 Vol.30 (3): 38502-
[Abstract]
(385)
[HTML 1 KB]
[PDF 977 KB]
(105)
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128502 |
Jinhui Gao(高金辉), Yehao Li(李叶豪), Yuxuan Hu(胡宇轩), Zhitong Wang(王志通), Anqi Hu(胡安琪), and Xia Guo(郭霞)\ccclink |
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A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity |
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Chin. Phys. B
2020 Vol.29 (12): 128502-
[Abstract]
(409)
[HTML 1 KB]
[PDF 869 KB]
(171)
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98504 |
Deshuang Guo(郭德双), Wei Li(李微), Dengkui Wang(王登魁), Bingheng Meng(孟兵恒), Dan Fang(房丹), Zhipeng Wei(魏志鹏) |
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High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition |
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Chin. Phys. B
2020 Vol.29 (9): 98504-098504
[Abstract]
(553)
[HTML 0 KB]
[PDF 1296 KB]
(93)
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58501 |
Zhi-Feng Tian(田志锋), Peng Xu(徐鹏), Yao Yu(余耀), Jian-Dong Sun(孙建东), Wei Feng(冯伟), Qing-Feng Ding(丁青峰), Zhan-Wei Meng(孟占伟), Xiang Li(李想), Jin-Hua Cai(蔡金华), Zhong-Xin Zheng(郑中信), Xin-Xing Li(李欣幸), Lin Jin(靳琳), Hua Qin(秦华), Yun-Fei Sun(孙云飞) |
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Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures |
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Chin. Phys. B
2019 Vol.28 (5): 58501-058501
[Abstract]
(883)
[HTML 1 KB]
[PDF 741 KB]
(322)
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18502 |
Ye Wang(王烨), Meng-Lei Gao(高孟磊), Jin-Liang Wu(吴金良), Xing-Wang Zhang(张兴旺) |
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Metal halide perovskite photodetectors: Material featuresand device engineering |
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Chin. Phys. B
2019 Vol.28 (1): 18502-018502
[Abstract]
(957)
[HTML 1 KB]
[PDF 4180 KB]
(444)
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98401 |
Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋) |
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Performance enhancement of CMOS terahertz detector by drain current |
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Chin. Phys. B
2017 Vol.26 (9): 98401-098401
[Abstract]
(738)
[HTML 1 KB]
[PDF 612 KB]
(261)
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97202 |
Jun Chen(陈俊), Jiabing Lv(吕加兵) |
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Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs |
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Chin. Phys. B
2016 Vol.25 (9): 97202-097202
[Abstract]
(774)
[HTML 1 KB]
[PDF 233 KB]
(282)
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108506 |
Chen Qing-Tao (陈庆涛), Huang Yong-Qing (黄永清), Fei Jia-Rui (费嘉瑞), Duan Xiao-Feng (段晓峰), Liu Kai (刘凯), Liu Feng (刘锋), Kang Chao (康超), Wang Jun-Chu (汪君楚), Fang Wen-Jing (房文敬), Ren Xiao-Min (任晓敏) |
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Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity |
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Chin. Phys. B
2015 Vol.24 (10): 108506-108506
[Abstract]
(797)
[HTML 1 KB]
[PDF 620 KB]
(780)
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48504 |
Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟) |
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Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor |
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Chin. Phys. B
2015 Vol.24 (4): 48504-048504
[Abstract]
(566)
[HTML 0 KB]
[PDF 266 KB]
(299)
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48501 |
Yuan Ji-Ren (袁吉仁), Huang Hai-Bin (黄海宾), Deng Xin-Hua (邓新华), Liang Xiao-Jun (梁晓军), Zhou Nai-Gen (周耐根), Zhou Lang (周浪) |
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Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect |
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Chin. Phys. B
2015 Vol.24 (4): 48501-048501
[Abstract]
(675)
[HTML 0 KB]
[PDF 464 KB]
(406)
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40701 |
Tu Xue-Cou (涂学凑), Kang Lin (康琳), Liu Xin-Hua (刘新华), Mao Qing-Kai (毛庆凯), Wan Chao (万超), Chen Jian (陈健), Jin Biao-Bing (金飚兵), Ji Zheng-Ming (吉争鸣), Xu Wei-Wei (许伟伟), Wu Pei-Heng (吴培亨) |
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Nb5N6 microbolometer array for terahertz detection |
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Chin. Phys. B
2013 Vol.22 (4): 40701-040701
[Abstract]
(782)
[HTML 1 KB]
[PDF 943 KB]
(849)
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57304 |
Pu Hong-Bin (蒲红斌), Cao Lin (曹琳), Chen Zhi-Ming (陈治明), Ren Jie (任杰) |
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Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer |
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Chin. Phys. B
2011 Vol.20 (5): 57304-057304
[Abstract]
(1492)
[HTML 0 KB]
[PDF 1610 KB]
(1664)
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18504 |
Zuo Yu-Hua(左玉华),Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明) |
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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm |
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Chin. Phys. B
2011 Vol.20 (1): 18504-018504
[Abstract]
(1799)
[HTML 0 KB]
[PDF 1079 KB]
(926)
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1276 |
Zhang Yi-Men(张义门), Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明) |
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The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector |
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Chin. Phys. B
2007 Vol.16 (5): 1276-1279
[Abstract]
(1383)
[HTML 1 KB]
[PDF 417 KB]
(790)
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785 |
Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors |
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Chin. Phys. B
2003 Vol.12 (7): 785-788
[Abstract]
(1204)
[HTML 0 KB]
[PDF 182 KB]
(510)
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