Other articles related with "responsivity":
57301 Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华)
  High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film
    Chin. Phys. B   2021 Vol.30 (5): 57301-057301 [Abstract] (465) [HTML 1 KB] [PDF 2894 KB] (195)
38502 Heng Yue(岳恒), Anqi Hu(胡安琪), Qiaoli Liu(刘巧莉), Huijun Tian(田慧军), Chengri Hu(胡成日), Xiansong Ren(任显松), Nianyu Chen(陈年域), Chen Ge(葛琛), Kuijuan Jin(金奎娟), and Xia Guo(郭霞)
  Graphene/SrTiO3 interface-based UV photodetectors with high responsivity
    Chin. Phys. B   2021 Vol.30 (3): 38502- [Abstract] (349) [HTML 1 KB] [PDF 977 KB] (84)
128502 Jinhui Gao(高金辉), Yehao Li(李叶豪), Yuxuan Hu(胡宇轩), Zhitong Wang(王志通), Anqi Hu(胡安琪), and Xia Guo(郭霞)\ccclink
  A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity
    Chin. Phys. B   2020 Vol.29 (12): 128502- [Abstract] (376) [HTML 1 KB] [PDF 869 KB] (149)
98504 Deshuang Guo(郭德双), Wei Li(李微), Dengkui Wang(王登魁), Bingheng Meng(孟兵恒), Dan Fang(房丹), Zhipeng Wei(魏志鹏)
  High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition
    Chin. Phys. B   2020 Vol.29 (9): 98504-098504 [Abstract] (492) [HTML 0 KB] [PDF 1296 KB] (90)
58501 Zhi-Feng Tian(田志锋), Peng Xu(徐鹏), Yao Yu(余耀), Jian-Dong Sun(孙建东), Wei Feng(冯伟), Qing-Feng Ding(丁青峰), Zhan-Wei Meng(孟占伟), Xiang Li(李想), Jin-Hua Cai(蔡金华), Zhong-Xin Zheng(郑中信), Xin-Xing Li(李欣幸), Lin Jin(靳琳), Hua Qin(秦华), Yun-Fei Sun(孙云飞)
  Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
    Chin. Phys. B   2019 Vol.28 (5): 58501-058501 [Abstract] (825) [HTML 1 KB] [PDF 741 KB] (319)
18502 Ye Wang(王烨), Meng-Lei Gao(高孟磊), Jin-Liang Wu(吴金良), Xing-Wang Zhang(张兴旺)
  Metal halide perovskite photodetectors: Material featuresand device engineering
    Chin. Phys. B   2019 Vol.28 (1): 18502-018502 [Abstract] (908) [HTML 1 KB] [PDF 4180 KB] (409)
98401 Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋)
  Performance enhancement of CMOS terahertz detector by drain current
    Chin. Phys. B   2017 Vol.26 (9): 98401-098401 [Abstract] (685) [HTML 1 KB] [PDF 612 KB] (254)
97202 Jun Chen(陈俊), Jiabing Lv(吕加兵)
  Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs
    Chin. Phys. B   2016 Vol.25 (9): 97202-097202 [Abstract] (712) [HTML 1 KB] [PDF 233 KB] (280)
108506 Chen Qing-Tao (陈庆涛), Huang Yong-Qing (黄永清), Fei Jia-Rui (费嘉瑞), Duan Xiao-Feng (段晓峰), Liu Kai (刘凯), Liu Feng (刘锋), Kang Chao (康超), Wang Jun-Chu (汪君楚), Fang Wen-Jing (房文敬), Ren Xiao-Min (任晓敏)
  Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
    Chin. Phys. B   2015 Vol.24 (10): 108506-108506 [Abstract] (738) [HTML 1 KB] [PDF 620 KB] (739)
48504 Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟)
  Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor
    Chin. Phys. B   2015 Vol.24 (4): 48504-048504 [Abstract] (503) [HTML 0 KB] [PDF 266 KB] (296)
48501 Yuan Ji-Ren (袁吉仁), Huang Hai-Bin (黄海宾), Deng Xin-Hua (邓新华), Liang Xiao-Jun (梁晓军), Zhou Nai-Gen (周耐根), Zhou Lang (周浪)
  Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
    Chin. Phys. B   2015 Vol.24 (4): 48501-048501 [Abstract] (629) [HTML 0 KB] [PDF 464 KB] (403)
40701 Tu Xue-Cou (涂学凑), Kang Lin (康琳), Liu Xin-Hua (刘新华), Mao Qing-Kai (毛庆凯), Wan Chao (万超), Chen Jian (陈健), Jin Biao-Bing (金飚兵), Ji Zheng-Ming (吉争鸣), Xu Wei-Wei (许伟伟), Wu Pei-Heng (吴培亨)
  Nb5N6 microbolometer array for terahertz detection
    Chin. Phys. B   2013 Vol.22 (4): 40701-040701 [Abstract] (723) [HTML 1 KB] [PDF 943 KB] (796)
57304 Pu Hong-Bin (蒲红斌), Cao Lin (曹琳), Chen Zhi-Ming (陈治明), Ren Jie (任杰)
  Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer
    Chin. Phys. B   2011 Vol.20 (5): 57304-057304 [Abstract] (1442) [HTML 0 KB] [PDF 1610 KB] (1653)
18504 Zuo Yu-Hua(左玉华),Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明)
  InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm
    Chin. Phys. B   2011 Vol.20 (1): 18504-018504 [Abstract] (1740) [HTML 0 KB] [PDF 1079 KB] (913)
1276 Zhang Yi-Men(张义门), Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明)
  The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector
    Chin. Phys. B   2007 Vol.16 (5): 1276-1279 [Abstract] (1333) [HTML 1 KB] [PDF 417 KB] (782)
785 Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓)
  Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors
    Chin. Phys. B   2003 Vol.12 (7): 785-788 [Abstract] (1165) [HTML 0 KB] [PDF 182 KB] (505)
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