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Chin. Phys. B, 2011, Vol. 20(1): 018504    DOI: 10.1088/1674-1056/20/1/018504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

Zuo Yu-Hua(左玉华),Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm2) with 3 dB bandwidth at 13.4 GHz have been achieved.
Keywords:  high responsivity      diluted waveguide      evanescent coupling      waveguide photodiode  
Received:  20 January 2010      Revised:  08 March 2010      Accepted manuscript online: 
PACS:  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
  42.81.Qb (Fiber waveguides, couplers, and arrays)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006CB302802).

Cite this article: 

Zuo Yu-Hua(左玉华),Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 2011 Chin. Phys. B 20 018504

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