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Other articles related with "interface states":
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87804 |
Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科) |
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Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states |
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Chin. Phys. B
2022 Vol.31 (8): 87804-087804
[Abstract]
(348)
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[PDF 3155 KB]
(60)
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57303 |
Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超) |
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Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions |
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Chin. Phys. B
2022 Vol.31 (5): 57303-057303
[Abstract]
(332)
[HTML 1 KB]
[PDF 1700 KB]
(89)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(477)
[HTML 1 KB]
[PDF 790 KB]
(162)
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(683)
[HTML 1 KB]
[PDF 770 KB]
(163)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(586)
[HTML 1 KB]
[PDF 1086 KB]
(370)
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68802 |
Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴) |
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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells |
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Chin. Phys. B
2017 Vol.26 (6): 68802-068802
[Abstract]
(744)
[HTML 1 KB]
[PDF 392 KB]
(500)
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123101 |
Hong-Xia Liu(柳红霞), Fu-Ling Tang(汤富领), Hong-Tao Xue(薛红涛), Yu Zhang(张宇), Yu-Wen Cheng(程育汶), Yu-Dong Feng(冯煜东) |
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Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations |
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Chin. Phys. B
2016 Vol.25 (12): 123101-123101
[Abstract]
(646)
[HTML 1 KB]
[PDF 3247 KB]
(368)
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88504 |
Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明) |
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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress |
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Chin. Phys. B
2015 Vol.24 (8): 88504-088504
[Abstract]
(864)
[HTML 1 KB]
[PDF 398 KB]
(979)
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77307 |
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明) |
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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors |
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Chin. Phys. B
2015 Vol.24 (7): 77307-077307
[Abstract]
(697)
[HTML 1 KB]
[PDF 552 KB]
(473)
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77301 |
Tang Fu-Ling (汤富领), Liu Ran (刘冉), Xue Hong-Tao (薛红涛), Lu Wen-Jiang (路文江), Feng Yu-Dong (冯煜东), Rui Zhi-Yuan (芮执元), Huang Min (黄敏) |
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Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations |
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Chin. Phys. B
2014 Vol.23 (7): 77301-077301
[Abstract]
(545)
[HTML 1 KB]
[PDF 763 KB]
(1280)
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47303 |
H. M. Baran, A. Tataroğlu |
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Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements |
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Chin. Phys. B
2013 Vol.22 (4): 47303-047303
[Abstract]
(668)
[HTML 1 KB]
[PDF 884 KB]
(1923)
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97106 |
Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97106-097106
[Abstract]
(1642)
[HTML 0 KB]
[PDF 486 KB]
(630)
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87201 |
Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏) |
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Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) |
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Chin. Phys. B
2010 Vol.19 (8): 87201-087201
[Abstract]
(2195)
[HTML 1 KB]
[PDF 191 KB]
(985)
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1614 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact |
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Chin. Phys. B
2009 Vol.18 (4): 1614-1617
[Abstract]
(1524)
[HTML 1 KB]
[PDF 171 KB]
(838)
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1817 |
Huang Wei-Qi(黄伟其), Xu Li(许丽), Wang Hai-Xu(王海旭), Jin Feng(金峰), Wu Ke-Yue(吴克跃), Liu Shi-Rong(刘世荣), Qin Cao-Jian(秦朝建), and Qin Shui-Jie(秦水介) |
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Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser |
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Chin. Phys. B
2008 Vol.17 (5): 1817-1820
[Abstract]
(1212)
[HTML 1 KB]
[PDF 523 KB]
(670)
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1140 |
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰) |
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Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs |
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Chin. Phys. B
2007 Vol.16 (4): 1140-1144
[Abstract]
(1648)
[HTML 0 KB]
[PDF 267 KB]
(985)
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3502 |
Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华) |
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Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses |
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Chin. Phys. B
2007 Vol.16 (11): 3502-3506
[Abstract]
(1678)
[HTML 1 KB]
[PDF 882 KB]
(565)
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1644 |
Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R. |
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Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs |
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Chin. Phys. B
2005 Vol.14 (8): 1644-1648
[Abstract]
(1299)
[HTML 1 KB]
[PDF 252 KB]
(506)
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1523)
[HTML 1 KB]
[PDF 216 KB]
(629)
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189 |
Ren Hong-xia (任红霞), Hao Yue (郝跃) |
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HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS |
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Chin. Phys. B
2001 Vol.10 (3): 189-193
[Abstract]
(1135)
[HTML 0 KB]
[PDF 257 KB]
(564)
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