Other articles related with "dopant":
58101 Zihang Jia(贾子航), Bo Zhou(周波), Zhenyi Jiang(姜振益), and Xiaodong Zhang(张小东)
  Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor
    Chin. Phys. B   2024 Vol.33 (5): 58101-058101 [Abstract] (49) [HTML 1 KB] [PDF 770 KB] (36)
27801 Gui-Rong Liu(刘桂榕), Xiao-Dong Chen(陈晓东), Hong-Gang Liu(刘红刚), Yan Wang(王琰), Min Sun(孙敏), Na Yan(闫娜), Qi Qian(钱奇), and Zhong-Min Yang(杨中民)
  Radiation resistance property of barium gallo-germanate glass doped by Nb2O5
    Chin. Phys. B   2022 Vol.31 (2): 27801-027801 [Abstract] (311) [HTML 0 KB] [PDF 861 KB] (59)
127302 Xiao-Di Zhang(张晓迪), Wei-Hua Han(韩伟华), Wen Liu(刘雯), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Chong Yang(杨冲), Jun-Dong Chen(陈俊东), Fu-Hua Yang(杨富华)
  Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor
    Chin. Phys. B   2019 Vol.28 (12): 127302-127302 [Abstract] (697) [HTML 1 KB] [PDF 1850 KB] (155)
107801 Zhi-Qi Kou(寇志起), Yu Tang(唐宇), Li-Ping Yang(杨丽萍), Fei-Yu Yang(杨飞宇), Wen-Jun Guo(郭文军)
  Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure
    Chin. Phys. B   2018 Vol.27 (10): 107801-107801 [Abstract] (679) [HTML 1 KB] [PDF 498 KB] (158)
97310 Xiao-Song Zhao(赵晓松), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华)
  Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (9): 97310-097310 [Abstract] (621) [HTML 1 KB] [PDF 2113 KB] (149)
18806 Dingrong Liu(刘定荣), Dan Han(韩丹), Menglin Huang(黄梦麟), Xian Zhang(张弦), Tao Zhang(张涛), Chenmin Dai(戴称民), Shiyou Chen(陈时友)
  Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors
    Chin. Phys. B   2018 Vol.27 (1): 18806-018806 [Abstract] (820) [HTML 1 KB] [PDF 5457 KB] (1271)
97301 Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣)
  Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants
    Chin. Phys. B   2017 Vol.26 (9): 97301-097301 [Abstract] (583) [HTML 0 KB] [PDF 776 KB] (203)
57304 Wei Huang(黄巍), Chao Lu(陆超), Jue Yu(余珏), Jiang-Bin Wei(魏江镔), Chao-Wen Chen(陈超文), Jian-Yuan Wang(汪建元), Jian-Fang Xu(徐剑芳), Chen Wang(王尘), Cheng Li(李成), Song-Yan Chen(陈松岩), Chun-Li Liu(刘春莉), Hong-Kai Lai(赖虹凯)
  High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
    Chin. Phys. B   2016 Vol.25 (5): 57304-057304 [Abstract] (670) [HTML 1 KB] [PDF 398 KB] (360)
108101 Ramin Yousefi, Mohsen Cheragizade, Farid Jamali-Sheini, M. R. Mahmoudian, Abdolhossein Saaédi, Nay Ming Huang
  Influences of anionic and cationic dopants on the morphology andoptical properties of PbS nanostructures
    Chin. Phys. B   2014 Vol.23 (10): 108101-108101 [Abstract] (533) [HTML 1 KB] [PDF 1551 KB] (631)
68401 Tian Xiao-Bo (田晓波), Xu Hui (徐晖)
  Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier
    Chin. Phys. B   2014 Vol.23 (6): 68401-068401 [Abstract] (471) [HTML 1 KB] [PDF 2390 KB] (1097)
88502 Tian Xiao-Bo (田晓波), Xu Hui (徐晖), Li Qing-Jiang (李清江)
  The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier
    Chin. Phys. B   2013 Vol.22 (8): 88502-088502 [Abstract] (584) [HTML 1 KB] [PDF 907 KB] (835)
88501 Tian Xiao-Bo (田晓波), Xu Hui (徐晖)
  The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis
    Chin. Phys. B   2013 Vol.22 (8): 88501-088501 [Abstract] (677) [HTML 1 KB] [PDF 929 KB] (1456)
107101 Chen Gang (陈刚), Gao Shang-Peng (高尚鹏)
  Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory
    Chin. Phys. B   2012 Vol.21 (10): 107101-107101 [Abstract] (1098) [HTML 1 KB] [PDF 3695 KB] (12413)
First page | Previous Page | Next Page | Last PagePage 1 of 1