Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor

doi:10.1088/1674-1056/ab527a

Abstract We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.

Keywords: silicon nanowire transistor single electron tunneling dopant-induced quantum dots tunneling current spectroscopy

Received: 16 September 2019
Revised: 28 October 2019
Accepted manuscript online:

PACS:	73.63.Kv	(Quantum dots)
	73.23.Hk	(Coulomb blockade; single-electron tunneling)
	73.43.Jn	(Tunneling)
	85.35.Gv	(Single electron devices)

Fund: Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).

Corresponding Authors: Wei-Hua Han
E-mail: weihua@semi.ac.cn

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Xiao-Di Zhang(张晓迪), Wei-Hua Han(韩伟华), Wen Liu(刘雯), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Chong Yang(杨冲), Jun-Dong Chen(陈俊东), Fu-Hua Yang(杨富华) Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor 2019 Chin. Phys. B 28 127302

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[1]	Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(6): 066804.

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Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor

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