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Other articles related with "capacitor"：
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68501 |
Xiao Cai(蔡晓), Yi-Biao Zhou(周翼彪), Wen-Long Yu(于文龙), Kang-Lin Xiong(熊康林), and Jia-Gui Feng(冯加贵) |
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Optimize Purcell filter design for reducing influence of fabrication variation |
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Chin. Phys. B
2024 Vol.33 (6): 68501-068501
[Abstract]
(83)
[HTML 1 KB]
[PDF 911 KB]
(33)
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28201 |
Hongyun Ma(马鸿云), Lingxiao Ma(马凌霄), Huasheng Bi(毕华盛), and Wei Lan(兰伟) |
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The rise of supercapacitor diodes: Current progresses and future challenges |
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Chin. Phys. B
2024 Vol.33 (2): 28201-028201
[Abstract]
(140)
[HTML 0 KB]
[PDF 5566 KB]
(125)
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117302 |
Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君) |
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Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors |
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Chin. Phys. B
2022 Vol.31 (11): 117302-117302
[Abstract]
(358)
[HTML 1 KB]
[PDF 1551 KB]
(144)
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18401 |
Xiang Xu(徐翔), Gangquan Si(司刚全), Zhang Guo(郭璋), and Babajide Oluwatosin Oresanya |
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Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection |
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Chin. Phys. B
2022 Vol.31 (1): 18401-018401
[Abstract]
(459)
[HTML 0 KB]
[PDF 1122 KB]
(58)
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128201 |
Zhengwei Xiong(熊政伟), Xuemei An(安雪梅), Qian Liu(刘倩), Jiayi Zhu(朱家艺), Xiaoqiang Zhang(张小强), Chenchun Hao(郝辰春), Qiang Yang(羊强), Zhipeng Gao(高志鹏), and Meng Zhang(张盟) |
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Morphological effect on electrochemical performance of nanostructural CrN |
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Chin. Phys. B
2021 Vol.30 (12): 128201-128201
[Abstract]
(378)
[HTML 0 KB]
[PDF 3919 KB]
(82)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(527)
[HTML 1 KB]
[PDF 790 KB]
(206)
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96701 |
He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙) |
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Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor |
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Chin. Phys. B
2020 Vol.29 (9): 96701-096701
[Abstract]
(692)
[HTML 0 KB]
[PDF 1725 KB]
(244)
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47701 |
Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威) |
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Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands |
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Chin. Phys. B
2020 Vol.29 (4): 47701-047701
[Abstract]
(648)
[HTML 1 KB]
[PDF 1331 KB]
(125)
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60701 |
Yong-Chao Li(李永超), Xin Dai(戴欣), Jun-Liang Jiang(江俊良), Jia-Zheng Pan(潘佳政), Xing-Yu Wei(魏兴雨), Ya-Peng Lu(卢亚鹏), Sheng Lu(卢盛), Xue-Cou Tu(涂学凑), Guo-Zhu Sun(孙国柱), Pei-Heng Wu(吴培亨) |
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Superconducting membrane mechanical oscillator based on vacuum-gap capacitor |
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Chin. Phys. B
2018 Vol.27 (6): 60701-060701
[Abstract]
(702)
[HTML 1 KB]
[PDF 1362 KB]
(215)
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120701 |
Zhi Zhou(周知), Dong-Sheng Yu(于东升), Xiao-Yuan Wang(王晓媛) |
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Investigation on the dynamic behaviors of the coupled memcapacitor-based circuits |
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Chin. Phys. B
2017 Vol.26 (12): 120701-120701
[Abstract]
(665)
[HTML 1 KB]
[PDF 1950 KB]
(196)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(624)
[HTML 1 KB]
[PDF 1086 KB]
(387)
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10702 |
Saqib Jabbar, Riaz Ahmad, Paul K Chu |
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Morphological and electrical properties of SrTiO3/TiO2/SrTiO3 sandwich structures prepared by plasma sputtering |
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Chin. Phys. B
2017 Vol.26 (1): 10702-010702
[Abstract]
(621)
[HTML 1 KB]
[PDF 953 KB]
(328)
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118502 |
Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯) |
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Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors |
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Chin. Phys. B
2016 Vol.25 (11): 118502-118502
[Abstract]
(596)
[HTML 0 KB]
[PDF 1483 KB]
(388)
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96106 |
Hai-Tao Zhou(周海涛), Ning Yu(喻宁), Fei Zou(邹飞), Zhao-Hui Yao(姚朝晖), Ge Gao(高歌), Cheng-Min Shen(申承民) |
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Controllable preparation of vertically standing graphene sheets and their wettability and supercapacitive properties |
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Chin. Phys. B
2016 Vol.25 (9): 96106-096106
[Abstract]
(673)
[HTML 1 KB]
[PDF 1875 KB]
(466)
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67504 |
Jing Wang(王静), Iftikhar Ahmed Malik, Renrong Liang(梁仁荣), Wen Huang(黄文), Renkui Zheng(郑仁奎), Jinxing Zhang(张金星) |
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Nanoscale control of low-dimensional spin structures in manganites |
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Chin. Phys. B
2016 Vol.25 (6): 67504-067504
[Abstract]
(858)
[HTML 1 KB]
[PDF 3256 KB]
(606)
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48102 |
Jiu-Xing Jiang(姜久兴), Xu-Zhi Zhang(张旭志), Zhen-Hua Wang(王振华), Jian-Jun Xu(许健君) |
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Graphene/polyaniline composite sponge of three-dimensional porous network structure as supercapacitor electrode |
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Chin. Phys. B
2016 Vol.25 (4): 48102-048102
[Abstract]
(710)
[HTML 1 KB]
[PDF 1479 KB]
(437)
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16801 |
Yike Huang(黄一珂), Xiaohong Liu(刘晓红), Shu Li(李姝), Tianying Yan(言天英) |
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Development of mean-field electrical double layer theory |
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Chin. Phys. B
2016 Vol.25 (1): 16801-016801
[Abstract]
(1020)
[HTML 1 KB]
[PDF 1030 KB]
(878)
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18207 |
Lei Wen(闻雷), Ying Shi(石颖), Jing Chen(陈静), Bin Yan(严彬), Feng Li(李峰) |
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Wavy structures for stretchable energy storage devices: Structural design and implementation |
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Chin. Phys. B
2016 Vol.25 (1): 18207-018207
[Abstract]
(991)
[HTML 1 KB]
[PDF 3091 KB]
(861)
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10503 |
Guang-Yi Wang(王光义), Bo-Zhen Cai(蔡博振), Pei-Pei Jin(靳培培), Ti-Ling Hu(胡体玲) |
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Memcapacitor model and its application in a chaotic oscillator |
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Chin. Phys. B
2016 Vol.25 (1): 10503-010503
[Abstract]
(784)
[HTML 1 KB]
[PDF 16228 KB]
(1937)
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126701 |
Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) |
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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses |
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Chin. Phys. B
2015 Vol.24 (12): 126701-126701
[Abstract]
(668)
[HTML 1 KB]
[PDF 305 KB]
(424)
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117303 |
Wang Jin-Hua (王锦华), Quan Jun (全军) |
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Dynamic responses of series parallel-plate mesoscopic capacitors to time-dependent external voltage |
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Chin. Phys. B
2015 Vol.24 (11): 117303-117303
[Abstract]
(636)
[HTML 1 KB]
[PDF 290 KB]
(264)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(812)
[HTML 0 KB]
[PDF 347 KB]
(401)
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86101 |
Zhou Ying (周颖), Wang Dao-Long (王道龙), Wang Chun-Lei (王春雷), Jin Xin-Xin (金新新), Qiu Jie-Shan (邱介山) |
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Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors |
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Chin. Phys. B
2014 Vol.23 (8): 86101-086101
[Abstract]
(974)
[HTML 1 KB]
[PDF 1200 KB]
(548)
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77307 |
Chen Wan-Jun (陈万军), Sun Rui-Ze (孙瑞泽), Peng Chao-Fei (彭朝飞), Zhang Bo (张波) |
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High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications |
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Chin. Phys. B
2014 Vol.23 (7): 77307-077307
[Abstract]
(633)
[HTML 1 KB]
[PDF 870 KB]
(754)
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57205 |
Li Zhen-Peng (李振鹏), Men Chuan-Ling (门传玲), Wang Wan (王婉), Cao Jun (曹军) |
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Fabrication and electrochemical performance of graphene-ZnO nanocomposites |
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Chin. Phys. B
2014 Vol.23 (5): 57205-057205
[Abstract]
(627)
[HTML 1 KB]
[PDF 1085 KB]
(496)
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17701 |
Tan Zhen (谭桢), Zhao Lian-Feng (赵连锋), Wang Jing (王敬), Xu Jun (许军) |
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Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation |
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Chin. Phys. B
2014 Vol.23 (1): 17701-017701
[Abstract]
(694)
[HTML 1 KB]
[PDF 520 KB]
(567)
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117308 |
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) |
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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
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Chin. Phys. B
2013 Vol.22 (11): 117308-117308
[Abstract]
(606)
[HTML 1 KB]
[PDF 443 KB]
(441)
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68401 |
Bao Bo-Cheng (包伯成), Feng Fei (冯霏), Dong Wei (董伟), Pan Sai-Hu (潘赛虎) |
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The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits |
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Chin. Phys. B
2013 Vol.22 (6): 68401-068401
[Abstract]
(638)
[HTML 1 KB]
[PDF 2835 KB]
(1174)
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48401 |
Xiong Han (熊汉), Hong Jin-Song (洪劲松), Jin Da-Lin (金大林) |
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Wideband dipole antenna with inter-digital capacitor |
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Chin. Phys. B
2013 Vol.22 (4): 48401-048401
[Abstract]
(592)
[HTML 1 KB]
[PDF 1379 KB]
(854)
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47303 |
H. M. Baran, A. Tataroğlu |
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Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements |
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Chin. Phys. B
2013 Vol.22 (4): 47303-047303
[Abstract]
(701)
[HTML 1 KB]
[PDF 884 KB]
(1953)
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18501 |
Jin Lin (金林), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Wang Yong (王永), Yu Zhao-An (余兆安), Jiang Dan-Dan (姜丹丹), Chen Jun-Ning (陈军宁), Liu Ming (刘明) |
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A simple and accurate method to measure program/erase speed in a memory capacitor structure |
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Chin. Phys. B
2013 Vol.22 (1): 18501-018501
[Abstract]
(975)
[HTML 0 KB]
[PDF 472 KB]
(741)
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117701 |
Liu Guan-Zhou (刘冠洲), Li Cheng (李成), Lu Chang-Bao (路长宝), Tang Rui-Fan (唐锐钒), Tang Meng-Rao (汤梦饶), Wu Zheng (吴政), Yang Xu (杨旭), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩 ) |
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Wet thermal annealing effect on TaN/HfO2/Ge metal–oxide–semiconductor capacitors with and without a GeO2 passivation layer |
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Chin. Phys. B
2012 Vol.21 (11): 117701-117701
[Abstract]
(1181)
[HTML 1 KB]
[PDF 452 KB]
(1270)
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90505 |
Zhang Lu (张路), Deng Ke (邓科), Luo Mao-Kang (罗懋康) |
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Control of fractional chaotic system based on fractional-order resistor–capacitor filter |
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Chin. Phys. B
2012 Vol.21 (9): 90505-090505
[Abstract]
(1289)
[HTML 1 KB]
[PDF 274 KB]
(760)
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127204 |
Liu Li(刘莉), Yang Yin-Tang(杨银堂), and Ma Xiao-Hua(马晓华) |
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The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric |
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Chin. Phys. B
2011 Vol.20 (12): 127204-127204
[Abstract]
(1506)
[HTML 1 KB]
[PDF 359 KB]
(1220)
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2197 |
Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新) |
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Oxidation of silicon surface with atomic oxygen radical anions |
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Chin. Phys. B
2008 Vol.17 (6): 2197-2203
[Abstract]
(1736)
[HTML 1 KB]
[PDF 507 KB]
(620)
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529 |
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) |
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
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Chin. Phys. B
2007 Vol.16 (2): 529-532
[Abstract]
(1563)
[HTML 1 KB]
[PDF 147 KB]
(511)
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1879 |
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) |
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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Chin. Phys. B
2006 Vol.15 (8): 1879-1882
[Abstract]
(1599)
[HTML 1 KB]
[PDF 381 KB]
(640)
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