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Spiking-bursting alternating chaos mediated by a locally active memristor |
| Yuxia Li(李玉霞)1, Xintong Yue(岳新同)1, Hui Chang(常辉)1,†, Baoxing Han(韩宝兴)1, and Yan Zhang(张燕)2 |
1 College of Electrical and Automation Engineering, Shandong University of Science and Technology, Qingdao 266590, China; 2 College of Safety and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590, China |
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Abstract Local active memristors demonstrate complex nonlinear dynamic characteristics under specific voltage stimuli, making them well-suited for emulating biological synapse behavior. This paper presents a novel local active memristor with coexisting hysteresis loops, whose non-volatility and local activity are experimentally verified. Based on this memristor, a spiking-bursting chaotic system is constructed, which can reproduce neuronal firing patterns such as periodic spiking, bursting and spiking-bursting alternating discharge. In addition, it reveals the generation mechanism of the spiking-bursting alternating chaos driven by the locally active memristor. Finally, the chaotic system is physically implemented on a field-programmable gate array (FPGA). The experimental results show excellent agreement with numerical simulations, confirming the system's feasibility and highlighting its potential for engineering applications.
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Received: 05 December 2025
Revised: 10 February 2026
Accepted manuscript online: 12 February 2026
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PACS:
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05.45.-a
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(Nonlinear dynamics and chaos)
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95.10.Fh
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(Chaotic dynamics)
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84.30.-r
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(Electronic circuits)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62473238), the Shandong Provincial Natural Science Foundation (Grant No. ZR2021MF116), and the Qingdao Natural Science Foundation (Grant No. 23- 2-1-233-zyydjch). |
Corresponding Authors:
Hui Chang
E-mail: changhui2000_mic@sdust.edu.cn
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Cite this article:
Yuxia Li(李玉霞), Xintong Yue(岳新同), Hui Chang(常辉), Baoxing Han(韩宝兴), and Yan Zhang(张燕) Spiking-bursting alternating chaos mediated by a locally active memristor 2026 Chin. Phys. B 35 030504
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