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Structural phase transition and quasi-layered active-ion distribution suppress concentration quenching in Tb3+-activated KBi(MoO4)2 |
| Mengyu Zhang(张梦宇)1,2,†, Shujing Pan(潘淑晶)1,2,†, Haitang Hu(胡海棠)3,4, Wenzhi Su(宿文志)1,2, Yong Zou(邹勇)1,2, Shoujun Ding(丁守军)1,2,‡, and Qingli Zhang(张庆礼)4 |
1 School of Microelectronics and Data Science, Anhui University of Technology, Maanshan 243002, China;
2 Anhui Provincial Joint Key Laboratory of Disciplines for Industrial Big Data Analysis and Intelligent Decision, Maanshan 243002, China;
3 University of Science and Technology of China, Hefei 230026, China;
4 Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China |
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Abstract Conventional Tb$^{3+}$-doped phosphors typically suffer from concentration quenching once the doping level exceeds a critical threshold. Consequently, the development of Tb$^{3+}$ phosphors with intrinsic resistance to concentration quenching has become a key research focus. In this work, we successfully synthesized KBi(MoO$_{4}$)$_{2}$: $x$Tb$^{3+}$ ($x = 0$-100 at%) (denoted as KBM: $x$Tb$^{3+}$) phosphors via a high-temperature solid-state reaction. Remarkably, no concentration quenching was observed across the entire doping range. This anti-quenching behavior originates from the large Tb$^{3+}$-Tb$^{3+}$ interionic distance ($> 5$ Å) inherent to the quasi-layered crystal structure, which effectively suppresses multipole-interaction-mediated energy migration. At full Tb$^{3+}$ substitution ($x = 100$ at%), the material undergoes a structural phase transition from the monoclinic KBM phase to the triclinic $\alpha $-KTb(MoO$_{4}$)$_{2}$ ($\alpha $-KTM) phase. The $\alpha $-KTM phosphor exhibits excellent thermal stability (activation energy $=$ 0.6129 eV) and a single-exponential decay profile, whereas KBM: $x$Tb$^{3+}$ ($x < 100$%) display double-exponential decay behaviors, attributed to dual energy transfer pathways. These findings provide new insights into the luminescence mechanisms of high-concentration rare-earth-doped systems and offer guidance for designing next-generation anti-quenching phosphors.
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Received: 14 September 2025
Revised: 24 October 2025
Accepted manuscript online: 06 November 2025
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PACS:
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78.55.-m
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(Photoluminescence, properties and materials)
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87.15.mq
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(Luminescence)
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32.50.+d
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(Fluorescence, phosphorescence (including quenching))
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33.50.-j
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(Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion))
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| Fund: This work was supported by the Natural Science Research Project of Anhui Province Education Department for Excellent Young Scholars (Grant No. 2024AH030007) and the National Natural Science Foundation of China (Grant No. 52202001). |
Corresponding Authors:
Shoujun Ding
E-mail: sjding@ahut.edu.cn
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Cite this article:
Mengyu Zhang(张梦宇), Shujing Pan(潘淑晶), Haitang Hu(胡海棠), Wenzhi Su(宿文志), Yong Zou(邹勇), Shoujun Ding(丁守军), and Qingli Zhang(张庆礼) Structural phase transition and quasi-layered active-ion distribution suppress concentration quenching in Tb3+-activated KBi(MoO4)2 2026 Chin. Phys. B 35 017801
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