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Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)2As2 |
| Xueqin Zhao(赵雪芹)1, Jinou Dong(董金瓯)1, Lingfeng Xie(谢玲凤)1, Xun Pan(潘洵)1, Haoyuan Tang(唐浩原)1, Zhicheng Xu(徐之程)1, and Fanlong Ning(宁凡龙)1,2,3,4,† |
1 School of Physics, Zhejiang University, Hangzhou 310027, China;
2 Institute for Advanced Study in Physics, Zhejiang University, Hangzhou 310027, China;
3 State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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Abstract We report the manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)$_{2}$As$_{2}$ through chemical pressure. The substitutions of Sr for Ba and Sb for As introduce positive and negative chemical pressures, respectively; neither Sr doping nor Sb doping change the tetragonal crystal structure. Based on Ba(Zn$_{0.75}$Mn$_{0.125}$Cu$_{0.125}$)$_{2}$As$_{2}$ with $T_{{\rm C}}$ $\sim34$ K, 10% Sr/Ba substitutions significantly improve $T_{{\rm C}}$ by $\sim15$% to 39 K, whereas 10% Sb/As substitutions substantially reduce $T_{{\rm C}}$ by $\sim47$% to 18 K. The AC magnetic susceptibility measurements indicate that Sr-doped and Sb-doped samples evolve into a spin glass state below the spin freezing temperature $T_{{\rm f}}$. Electrical transport measurements demonstrate that Sr-doped specimens retain semiconducting behavior; additionally, they display a significant negative magnetoresistance effect under applied magnetic fields and the magnetoresistance reaches $\sim-19%$ at 8 T.
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Received: 30 April 2025
Revised: 14 May 2025
Accepted manuscript online: 22 May 2025
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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75.50.Lk
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(Spin glasses and other random magnets)
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75.30.Cr
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(Saturation moments and magnetic susceptibilities)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402701 and 2022YFA1403202), the National Natural Science Foundation of China (Grant No. 12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No. 2021C01002). |
Corresponding Authors:
Fanlong Ning
E-mail: ningfl@zju.edu.cn
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Cite this article:
Xueqin Zhao(赵雪芹), Jinou Dong(董金瓯), Lingfeng Xie(谢玲凤), Xun Pan(潘洵), Haoyuan Tang(唐浩原), Zhicheng Xu(徐之程), and Fanlong Ning(宁凡龙) Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)2As2 2025 Chin. Phys. B 34 107510
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