Effect of copper/tungsten heterophase interface on radiation resistance: Insights from atomistic simulations
Wen Chen(陈文), Min Li(李敏), Bao-Qin Fu(付宝勤), Tun Chen(陈暾), Jie-Chao Cui(崔节超)†, and Qing Hou(侯氢)‡
Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
Abstract Nanostructured materials have demonstrated superior radiation-damage tolerance compared to their coarse-grained counterparts, contributing to the extended lifespan of nuclear materials. However, the mechanisms underlying this enhanced irradiation resistance remain unclear. In this study, we present atomistic simulations to investigate the impact of Cu/W heterophase interface on the evolution of irradiation-induced defects. The simulation results reveal that the Cu/W interfaces can act as defect sinks, effectively trapping self-interstitial atoms (SIAs). Furthermore, the interface demonstrates both the interstitial emission and interstitial transfer mechanisms, wherein the trapped W SIAs facilitate the emission of Cu atoms from the interface to the Cu side. These emitted Cu SIAs can promote defect recombination on the Cu side, leading to a reduced defect concentration in the Cu/W nanomultilayers. Consequently, these combined mechanisms contribute to a lower overall concentration of irradiation-induced defect, thereby enhancing the radiation resistance of Cu/W nano-multilayers.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12105194) and the Natural Science Foundation of Sichuan Province of China (Grant Nos. 2022NSFSC1251 and 2022NSFSC1265).
Wen Chen(陈文), Min Li(李敏), Bao-Qin Fu(付宝勤), Tun Chen(陈暾), Jie-Chao Cui(崔节超), and Qing Hou(侯氢) Effect of copper/tungsten heterophase interface on radiation resistance: Insights from atomistic simulations 2025 Chin. Phys. B 34 046108
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