| ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
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Compact TE-pass polarizer based on lithium-niobate-on-insulator assisted by indium tin oxide and silicon nitride |
| Jia-Min Liu(刘家敏) and De-Long Zhang(张德龙)† |
| Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Key Laboratory of Optoelectronic Information Technology(Ministry of Education), and Key Laboratory of Micro-Opto-Electro-Mechanical Systems(MOEMS) Technology(Ministry of Education), Tianjin University, Tianjin 300072, China |
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Abstract An indium tin oxide (ITO) and silicon nitride (Si3N4) assisted compact TE-pass waveguide polarizer based on lithium-niobate-on-insulator is proposed and numerically analyzed. By properly designing the ITO and Si3N4 assisted structure and utilizing the epsilon-near-zero effect of ITO, the TM mode is strongly confined in the ITO layer with extremely high loss, while the TE mode is hardly affected and passes through the waveguide with low loss. The simulation results show that the polarizer has an extinction ratio of 22.5 dB and an insertion loss of 0.8 dB at the wavelength of 1.55 μm, and has an operating bandwidth of about 125 nm (from 1540 nm to 1665 nm) for an extinction ratio of >20 dB and an insertion loss of <0.95 dB. Moreover, the proposed device exhibits large fabrication tolerances. More notably, the device is compact, with a length of only 7.5 μm, and is appropriate for on-chip applications.
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Received: 25 April 2022
Revised: 25 September 2022
Accepted manuscript online: 29 September 2022
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PACS:
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42.82.-m
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(Integrated optics)
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42.79.Ci
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(Filters, zone plates, and polarizers)
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42.25.Ja
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(Polarization)
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42.82.Et
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(Waveguides, couplers, and arrays)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61875148). |
Corresponding Authors:
De-Long Zhang
E-mail: dlzhang@tju.edu.cn
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Cite this article:
Jia-Min Liu(刘家敏) and De-Long Zhang(张德龙) Compact TE-pass polarizer based on lithium-niobate-on-insulator assisted by indium tin oxide and silicon nitride 2023 Chin. Phys. B 32 064208
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