Abstract Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.
Received: 28 February 2022
Revised: 17 April 2022
Accepted manuscript online: 22 April 2022
PACS:
42.55.Px
(Semiconductor lasers; laser diodes)
Fund: Project supported by the Science and Technology Development Plan of Jilin Province, China (Grant Nos. 20210201030GX and 20210201089GX).
Corresponding Authors:
Li Xu, Jie Fan
E-mail: 361394566@qq.com;fanjie@cust.edu.cn
Cite this article:
Qi-Qi Wang(王琦琦), Li Xu(徐莉)†, Jie Fan(范杰)‡, Hai-Zhu Wang(王海珠), and Xiao-Hui Ma(马晓辉) Lateral characteristics improvements of DBR laser diode with tapered Bragg grating 2022 Chin. Phys. B 31 094204
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