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Chin. Phys. B, 2015, Vol. 24(11): 110701    DOI: 10.1088/1674-1056/24/11/110701
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Composite behaviors of dual meminductor circuits

Zheng Ci-Yan (郑辞晏)a, Yu Dong-Sheng (于东升)a, Liang Yan (梁燕)a, Chen Meng-Ke (陈孟科)b
a School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China;
b School of Mechanical Engineering, Huaihai Institute of Technology, Lianyungang 222005, China

This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connections with different polarities. Based on the constitutive relations, two time-integral-of-flux (TIF) controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By utilizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.

Keywords:  composite behavior      serial connection      parallel connection      meminductor  
Received:  01 June 2015      Revised:  15 July 2015      Accepted manuscript online: 
PACS:  07.50.Ek (Circuits and circuit components)  
  84.30.Ng (Oscillators, pulse generators, and function generators)  
  85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)  

Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013QNB28.)

Corresponding Authors:  Yu Dong-Sheng     E-mail:

Cite this article: 

Zheng Ci-Yan (郑辞晏), Yu Dong-Sheng (于东升), Liang Yan (梁燕), Chen Meng-Ke (陈孟科) Composite behaviors of dual meminductor circuits 2015 Chin. Phys. B 24 110701

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