Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays
Zhangyang Zhou(周章洋)1,2, Jia Yang(杨佳)1, Yi Liu(刘艺)1, Zhipeng Gao(高志鹏)1,†, Linhong Cao(曹林洪)4, Leiming Fang(房雷鸣)3, Hongliang He(贺红亮)1, and Zhengwei Xiong(熊政伟)2,‡
1 Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China; 2 Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China; 3 Institute of Physics, Nuclear, and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China; 4 School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China
Abstract Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO2), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO2(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (Tc) decreased from 68° to 51°. The mechanism of Tc decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO2 films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO2, which must be instructive for the other strongly correlated materials and important for applications.
(Solid surfaces and solid-solid interfaces: structure and energetics)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11904299 and U1930124) and the Foundation of China Academy of Engineering Physics (Grant No. 2018AB02).
Zhangyang Zhou(周章洋), Jia Yang(杨佳), Yi Liu(刘艺), Zhipeng Gao(高志鹏), Linhong Cao(曹林洪), Leiming Fang(房雷鸣), Hongliang He(贺红亮), and Zhengwei Xiong(熊政伟) Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays 2021 Chin. Phys. B 30 126803
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