Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

doi:10.1088/1674-1056/aba60a

Abstract

We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor. The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as ∼1 V and steep subthreshold swing (83 mV/dec). The p-type conduction behavior of InSe is obtained when negative gate voltages are biased. Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride (h-BN) between InSe and the solid-ion-conductor substrate. By comparing the performance of devices with and without h-BN, the capacitance of solid ion conductors is extracted to be the same as that of ∼2 nm h-BN, and the mobility of InSe on solid ion conductors is comparable to that on the SiO₂ substrate. Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

Keywords: solid ion conductors electrostatic gating InSe van der Waals heterostructure

Received: 15 May 2020
Revised: 05 July 2020
Accepted manuscript online: 15 July 2020

Fund: the National Key Research and Development Projects of China (Grant Nos. 2016YFA0202300 and 2018FYA0305800), the National Natural Science Foundation of China (Grant Nos. 61674170 and 61888102), the K. C. Wong Education Foundation, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. Y201902).

Corresponding Authors: ^†Corresponding author. E-mail: lhbao@iphy.ac.cn ^‡Corresponding author. E-mail: hjgao@iphy.ac.cn

Cite this article:

Zhang Zhou(周璋), Liangmei Wu(吴良妹), Jiancui Chen(陈建翠), Jiajun Ma(马佳俊), Yuan Huang(黄元), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧) Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures 2020 Chin. Phys. B 29 118501

Fig. 1.

Schematic and optical images of the Li-SIC devices. (a) and (b) Schematic of the Li-SIC gated InSe field-effect transistor (a) and InSe/h-BN heterostructured transistor (b) with Ti/Au as the contact electrodes and the measurement setup. (c) and (d) Optical microscope images of a typical device on an InSe thin flake (c) and on an InSe/h-BN heterostructure (d), respectively. The white and yellow dashed lines indicate the outline of the InSe flake and the h-BN flake, respectively. The scale bar is 10 μm in (c) and (d).

Fig. 2.

Device performance of Li-SIC gated InSe thin flakes. (a) Transfer curves (I_ds vs. V_G) of the device in Fig. 1(c), measured at 260 K for V_ds = 0.1 V (dark blue line) in logarithmic scales and 0.3 V in logarithmic (light blue line) and linear (red line) scales. The two black dotted lines are linearly fitted in the linear region of red line and in the subthreshold region of light blue line to extract μ_FE of 129 cm² ⋅ V^–1 ⋅ s^–1 and SS of 83 mV/dec, respectively. (b) Transfer curves of negative V_G for V_ds = 0.05, 0.1 and 0.4 V. Inset: the accompanying gate-dependent leakage current I_g. (c) The temperature-dependent resistance at V_G = 3.6 V and 4.0 V, which shows the semiconducting to metallic transition when further increasing V_G to 4.0 V. Inset: the linear output curve (I_ds vs. V_ds) for V_G = 3.6 V at 260 K.

Fig. 3.

Device performance of the Li-SIC gated InSe/h-BN heterostructure. (a) Transfer curves (I_ds vs. V_G) of the device in Fig. 1(d) on an InSe/h-BN heterostructure on Li-SIC, measured at 260 K for V_ds = 0.3 V in logarithmic (blue) and linear (red) scales. The device performance keeps stable after one year. The two black dotted lines are linearly fitted in the linear region of red line and in the subthreshold region of light blue line to extract μ_FE of 160 cm² ⋅ V^–1 ⋅ s^–1 and SS of 204 mV/dec, respectively. (b) Output curves (I_ds vs. V_ds) at different gate voltages. (c) The temperature dependent resistance at V_G of 2 V, 3 V and 5 V. It all shows semiconducting behavior. (d) Gate current for devices with/without h-BN in between InSe and Li-SIC when sweeping V_G from 0 to 2.0 V. The leakage current is suppressed with h-BN thin flakes.

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Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

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