Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

doi:10.1088/1674-1056/28/7/077104

Abstract

Tin monoxide (SnO) is an interesting two-dimensional material because it is a rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically investigate the effects of different layer structures and strains on the electron-phonon coupling and phonon-limited mobility of SnO. The A_2u phonon mode in the high-frequency region is the main contributor to the coupling with electrons for different layer structures. Moreover, the orbital hybridization of Sn atoms existing only in the bilayer structure changes the conduction band edge and conspicuously decreases the electron-phonon coupling, and thus the electronic transport performance of the bilayer is superior to that of other layers. In addition, the compressive strain of ε=-1.0% in the monolayer structure results in a conduction band minimum (CBM) consisting of two valleys at the Γ point and along the M-Γ line, and also leads to the intervalley electronic scattering assisted by the E_g(-1) mode. However, the electron-phonon coupling regionally transferring from high frequency A_2u to low frequency E_g(-1) results in little change of mobility.

Keywords: two-dimensional materials tin monoxide electronic transport electron-phonon coupling

Received: 07 January 2019
Revised: 02 May 2019
Accepted manuscript online:

PACS:	51.50.+v	(Electrical properties)
	63.20.kd	(Phonon-electron interactions)
	63.20.dk	(First-principles theory)
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11747054), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2018M631760), the Project of Hebei Educational Department, China (Grant Nos. ZD2018015 and QN2018012), and the Advanced Postdoctoral Programs of Hebei Province, China (Grant No. B2017003004).

Corresponding Authors: Yong Liu
E-mail: yongliu@ysu.edu.cn

Cite this article:

Yanfeng Ge(盖彦峰), Yong Liu(刘永) Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide 2019 Chin. Phys. B 28 077104

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Wang C, Liu X, Wang Z, Zhao M, He H and Zou J 2018 Chin. Phys. B 27 118106
[3]	Molle A, Goldberger J, Houssa M, Xu Y, Zhang S C and Akinwande D 2017 Nat. Mater. 16 163
[4]	Mannix A J, Kiraly B, Hersam M C and Guisinger N P 2017 Nat. Rev. Chem. 1 0014
[5]	Lew Yan Voon L C 2015 Chin. Phys. B 24 87309
[6]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P and Zhang H 2013 Nat. Chem. 5 263
[7]	Li S L, Tsukagoshi K, Orgiu E and Samori P 2016 Chem. Soc. Rev. 45 118
[8]	Zhou X, Gan L, Zhang Q, Xiong X, Li H, Zhong Z, Han J and Zhai T 2016 J. Mater. Chem. C 4 2111
[9]	Liu Y, Weiss N O, Duan X, Cheng H C, Huang Y and Duan X 2016 Nat. Rev. Mater. 1 16042
[10]	Anasori B, Lukatskaya M R and Gogotsi Y 2017 Nat. Rev. Mater. 2 16098
[11]	Mas-Balleste R, Gomez-Navarro C, Gomez-Herrero J and Zamora F 2011 Nanoscale 3 20
[12]	Gupta A, Sakthivel T and Seal S 2015 Prog. Mater. Sci. 73 44
[13]	Yang J and Y Lu Y 2017 Chin. Phys. B 26 034201
[14]	Wang F 2017 Chin. Phys. B 26 034202
[15]	Cocemasov A I, Isacova C I and Nika D L 2018 Chin. Phys. B 27 56301
[16]	Zhang Q, Zhang H and Cheng X L 2018 Chin. Phys. B 27 27301
[17]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147
[18]	Geim A K and Grigorieva I V 2013 Nature 499 419
[19]	Saji K J, Tian K, Snure M and Tiwari A 2016 Adv. Electron. Mater. 2 1500453
[20]	Xiao D, Liu G B, Feng W, Xu X and Yao W 2012 Phys. Rev. Lett. 108 196802
[21]	Zhou X, Zhang Q, Gan L, Li H, Xiong J and Zhai T 2016 Adv. Sci. 3 1600177
[22]	De D, Manongdo J, See S, Zhang V, Guloy A and Peng H 2013 Nanotechnology 24 025202
[23]	Song H S, Li S L, Gao L, Xu Y, Ueno K, Tang J, Cheng Y B and Tsukagoshi K 2013 Nanoscale 5 9666
[24]	Su G, Hadjiev V G, Loya P E, Zhang J, Lei S, Maharjan S, Dong P, Ajayan P M, Lou J and Peng H 2015 Nano Lett. 15 506
[25]	Huang Y, Sutter E, Sadowski J T, Cotlet M, Monti O L, Racke D A, Neupane M R, Wickramaratne D, Lake R K, Parkinson B A and Sutter P 2014 ACS Nano 8 10743
[26]	Su Y, Ebrish M A, Olson E J and Koester S J 2013 Appl. Phys. Lett. 103 263104
[27]	Zhou X, Gan L, Tian W, Zhang Q, Jin S, Li H, Bando Y, Golberg D and Zhai T 2015 Adv. Mater. 27 8035
[28]	Pan T S, De D, Manongdo J, Guloy A M, Hadjiev V G, Lin Y and Peng H B 2013 Appl. Phys. Lett. 103 093108
[29]	Kamal C, Chakrabarti A and Ezawa M 2016 Phys. Rev. B 93 125428
[30]	Chowdhury C, Karmakar S and Datta A 2017 J. Phys. Chem. C 121 7615
[31]	Sinsermsuksakul P, Chakraborty R, Kim S B, Heald S M, Buonassisi T and Gordon R G 2012 Chem. Mater. 24 4556
[32]	Xia J, Li X Z, Huang X, Mao N, Zhu D D, Wang L, Xu H and Meng X M 2016 Nanoscale 8 2063
[33]	Micoulaut M, Wenic W and Wuttig M 2008 Phys. Rev. B 78 224209
[34]	Wang R Y, Caldwell M A, Jeyasingh R G D, Aloni S, Shelby R M, Wong H S P and Milliron D J 2011 J. Appl. Phys. 109 113506
[35]	Chung K M, Wamwangi D, Woda M, Wuttig M and Bensch W 2008 J. Appl. Phys. 103 083523
[36]	Huang Y, Ling C, Liu H, Wang S and Geng B 2014 J. Phys. Chem. C 118 9251
[37]	Wang H and Qian X 2017 2D Mater. 4 015042
[38]	Wu M and Zeng X C 2016 Nano Lett. 16 3236
[39]	Fei R, Li W, Li J and Yang L 2015 Appl. Phys. Lett. 107 173104
[40]	Gomes L C, Carvalho A and Castro Neto A H 2015 Phys. Rev. B 92 214103
[41]	Hsieh T H, Lin H, Liu J, Duan W, Bansil A and Fu L 2012 Nat. Commun. 3 982
[42]	Yang G, Liu J, Fu L, Duan W and Liu C 2014 Phys. Rev. B 89 085312
[43]	Liu J, Qian X and Fu L 2015 Nano Lett. 15 2657
[44]	Seixas L, Rodin A S, Carvalho A and Castro Neto A H 2016 Phys. Rev. Lett. 116 206803
[45]	Watson G W 2001 J. Chem. Phys. 114 758
[46]	Izumi F 1981 J. Solid State Chem. 38 381
[47]	Moreno M S and Mercader R C 1994 Phys. Rev. B 50 9875
[48]	Zhou W and Umezawa N 2015 Phys. Chem. Chem. Phys. 17 17816
[49]	Hosono H, Ogo Y, Yanagi H and Kamiya T 2011 Electrochem. Solid State Lett. 14 13
[50]	Varley J B, Schleife A, Janotti A and Van de Walle C G 2013 Appl. Phys. Lett. 103 082118
[51]	Caraveo-Frescas J A, Nayak P K, Al-Jawhari H A, Granato D B, Schwingenschlogl U and Alshareef H N 2013 ACS Nano 7 5160
[52]	Lefebvre I, Szymanski M, Olivier-Fourcade J and Jumas J 1998 Phys. Rev. B 58 1896
[53]	Pannetier J and Denes G 1980 Acta Crystallogr. 36 2763
[54]	Pan X Q and Fu L 2001 J. Electroceram. 7 35
[55]	Togo A, Oba F, Tanaka I and Tatsumi K 2006 Phys. Rev. B 74 195128
[56]	Ogo Y, Hiramatsu H, Nomura K, Yanagi H, Kamiya T, Hirano M and Hosono H 2008 Appl. Phys. Lett. 93 032113
[57]	Liang L Y, Liu Z M, Cao H T, Yu Z, Shi Y Y, Chen A H, Zhang H Z, Fang Y Q and Sun X L 2010 J. Electrochem. Soc. 157 598
[58]	Quackenbush N F, Allen J P, Scanlon D O, Sallis S, Hewlett J A, Nandur A S, Chen B, Smith K E, Weiland C, Fischer D A, Woicik J C, White B E, Watson G W and Piper L F J 2013 Chem. Mater. 25 3114
[59]	Thomas G 1997 Nature 389 907
[60]	Ou C W, Dhananjay Ho Z Y, Chuang Y C, Cheng S S and Wu M C 2008 Appl. Phys. Lett. 92 122113
[61]	Lee H N, Kim H J and Kim C K 2010 Jpn. J. Appl. Phys. 49 020202
[62]	Nomura K, Kamiya T and Hosono H 2011 Adv. Mater. 23 3431
[63]	Qiang L, Liu W, Pei Y, Wang G and Yao R 2017 Solid-State Electronics 129 163
[64]	Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J and Palacios T 2012 Nano Lett. 12 4674
[65]	Das S, Chen H Y, Penumatcha A V and Appenzeller J 2013 Nano Lett. 13 100
[66]	Li L, Yu Y, Ye G L, Ge Q, Ou X, Wu H, Feng D, Chen X H and Zhang Y 2014 Nat. Nanotechnology 9 372
[67]	He Y, Sobhani A, Lei S, Zhang Z, Gong Y, Jin Z, Zhou W, Yang Y, Zhang Y, Wang X, Yakobson B, Vajtai R, Halas N J, Li B, Xie E and Ajayan P 2016 Adv. Mater. 28 5126
[68]	Chen X D, Xin W, Jiang W S, Liu Z B, Chen Y and Tian J G 2016 Adv. Mater. 28 2563
[69]	Xin W, Chen X D, Liu Z B, Jiang W S, Gao X G, Jiang X Q, Chen Y and Tian J G 2016 Adv. Optical Mater. 4 1703
[70]	Cao Y, Fatemi V, Demir A, Fang S, Tomarken S L, Luo J Y, Sanchez-Yamagishi J D, Watanabe K, Taniguchi T, Kaxiras E, Ashoori R C and Jarillo-Herrero P 2018 Nature 556 80
[71]	Cao Y, Fatemi V, Fang S, Watanabe K, Taniguchi T, Kaxiras E and Jarillo-Herrero P 2018 Nature 556 43
[72]	Bissett M A, Tsujia M and Ago H 2014 Phys. Chem. Chem. Phys. 16 11124
[73]	Wu Y, Xia W, Gao W, Ren W and Zhang P 2017 Phys. Rev. Appl. 8 034007
[74]	Duerloo K A N, Li Y and Reed E J 2014 Nat. Commun. 5 4214
[75]	Rodin A S, Carvalho A and Castro Neto A H 2014 Phys. Rev. Lett. 112 176801
[76]	Zhu T and Ertekin E 2015 Phys. Rev. B 91 205429
[77]	Ge Y, Wan W, Feng W, Xiao D and Yao Y 2014 Phys. Rev. B 90 035414
[78]	Qiao J, Kong X, Hu Z X, Yang F and Ji W 2014 Nat. Commun. 5 4475
[79]	Allen P B 1978 Phys. Rev. B 17 3725
[80]	Gonze X 1997 Phys. Rev. B 55 10337
[81]	Gonze X and Lee C 1997 Phys. Rev. B 55 10355
[82]	Gonze X, Rignanese G M, Verstraete M, Beuken J M, Pouillon Y, Caracas R, Jollet F, Torrent M, Zerah G, Mikami M, Ghosez P, Veithen M, Raty J Y, Olevano V, Bruneval F, Reining L, Godby R, Onida G, Hamann D R and Allan D C 2005 Z. Kristallogr. 220 558
[83]	Gonze X, Amadon B, Anglade P M, et al. 2009 Comput. Phys. Commun. 180 2582
[84]	Hartwigsen C, Goedecker S and Hutter J 1998 Phys. Rev. B 58 3641
[85]	Baroni S, Gironcoli S D, Corso A D and Giannozzi P 2001 Rev. Mod. Phys. 73 515

[1]	First-principles study of the bandgap renormalization and optical property of β-LiGaO₂ Dangqi Fang(方党旗). Chin. Phys. B, 2023, 32(4): 047101.
[2]	High-temperature ferromagnetism and strong π-conjugation feature in two-dimensional manganese tetranitride Ming Yan(闫明), Zhi-Yuan Xie(谢志远), and Miao Gao(高淼). Chin. Phys. B, 2023, 32(3): 037104.
[3]	Half-metallicity induced by out-of-plane electric field on phosphorene nanoribbons Xiao-Fang Ouyang(欧阳小芳) and Lu Wang(王路). Chin. Phys. B, 2022, 31(7): 077304.
[4]	Preparation of PSFO and LPSFO nanofibers by electrospinning and their electronic transport and magnetic properties Ying Su(苏影), Dong-Yang Zhu(朱东阳), Ting-Ting Zhang(张亭亭), Yu-Rui Zhang(张玉瑞), Wen-Peng Han(韩文鹏), Jun Zhang(张俊), Seeram Ramakrishna, and Yun-Ze Long(龙云泽). Chin. Phys. B, 2022, 31(5): 057305.
[5]	Thermionic electron emission in the 1D edge-to-edge limit Tongyao Zhang(张桐耀), Hanwen Wang(王汉文), Xiuxin Xia(夏秀鑫), Chengbing Qin(秦成兵), and Xiaoxi Li(李小茜). Chin. Phys. B, 2022, 31(5): 058504.
[6]	Research status and performance optimization of medium-temperature thermoelectric material SnTe Pan-Pan Peng(彭盼盼), Chao Wang(王超), Lan-Wei Li(李岚伟), Shu-Yao Li(李淑瑶), and Yan-Qun Chen(陈艳群). Chin. Phys. B, 2022, 31(4): 047307.
[7]	Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon Xiao-Ke Lei(雷晓轲), Bin-Cheng Li(李斌成), Qi-Ming Sun(孙启明), Jing Wang(王静), Chun-Ming Gao(高椿明), and Ya-Fei Wang(王亚非). Chin. Phys. B, 2022, 31(3): 038102.
[8]	Conformational change-modulated spin transport at single-molecule level in carbon systems Yandong Guo(郭艳东), Xue Zhao(赵雪), Hongru Zhao(赵鸿儒), Li Yang(杨丽), Liyan Lin(林丽艳), Yue Jiang(姜悦), Dan Ma(马丹), Yuting Chen(陈雨婷), and Xiaohong Yan(颜晓红). Chin. Phys. B, 2022, 31(12): 127201.
[9]	Anisotropic plasmon dispersion and damping in multilayer 8-Pmmn borophene structures Kejian Liu(刘可鉴), Jian Li(李健), Qing-Xu Li(李清旭), and Jia-Ji Zhu(朱家骥). Chin. Phys. B, 2022, 31(11): 117303.
[10]	Epitaxy of III-nitrides on two-dimensional materials and its applications Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科). Chin. Phys. B, 2022, 31(11): 117702.
[11]	Tuning transport coefficients of monolayer MoSi₂N₄ with biaxial strain Xiao-Shu Guo(郭小姝) and San-Dong Guo(郭三栋). Chin. Phys. B, 2021, 30(6): 067102.
[12]	Effect of electrical contact on performance of WSe₂ field effect transistors Yi-Di Pang(庞奕荻), En-Xiu Wu(武恩秀), Zhi-Hao Xu(徐志昊), Xiao-Dong Hu(胡晓东), Sen Wu(吴森), Lin-Yan Xu(徐临燕), and Jing Liu(刘晶). Chin. Phys. B, 2021, 30(6): 068501.
[13]	Two-dimensional PC₃ as a promising anode material for potassium-ion batteries: First-principles calculations Chun Zhou(周淳), Junchao Huang(黄俊超), and Xiangmei Duan(段香梅). Chin. Phys. B, 2021, 30(5): 056801.
[14]	Thermally induced band hybridization in bilayer-bilayer MoS₂/WS₂ heterostructure Yanchong Zhao(赵岩翀), Tao Bo(薄涛), Luojun Du(杜罗军), Jinpeng Tian(田金朋), Xiaomei Li(李晓梅), Kenji Watanabe, Takashi Taniguchi, Rong Yang(杨蓉), Dongxia Shi(时东霞), Sheng Meng(孟胜), Wei Yang(杨威), and Guangyu Zhang(张广宇). Chin. Phys. B, 2021, 30(5): 057801.
[15]	Modulation of the second-harmonic generation in MoS₂ by graphene covering Chunchun Wu(吴春春), Nianze Shang(尚念泽), Zixun Zhao(赵子荀), Zhihong Zhang(张智宏), Jing Liang(梁晶), Chang Liu(刘畅), Yonggang Zuo(左勇刚), Mingchao Ding(丁铭超), Jinhuan Wang(王金焕), Hao Hong(洪浩), Jie Xiong(熊杰), and Kaihui Liu(刘开辉). Chin. Phys. B, 2021, 30(2): 027803.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

Cite this article:

Online attention