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Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires |
| Xia Guo(郭霞)1, Qiao-Li Liu(刘巧莉)2, Hui-Jun Tian(田慧军)2, Chun-Wei Guo(郭春威)2, Chong Li(李冲)2, An-Qi Hu(胡安琪)1, Xiao-Ying He(何晓颖)1, Hua Wu(武华)3 |
1 School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;
3 College of Physics and Electronic Information, Gannan Normal University, Ganzhou 341000, China |
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Abstract Silver nanowire (AgNW) networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide (ITO) and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements. The enhancement ratio of the light output power decreased as the GaP layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for GaP layer thicknesses of 0.5 μ, 1 μ, and 8 μ, respectively, when an AgNW network was included in AlGaInP light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the GaP layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.
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Received: 03 May 2018
Revised: 30 May 2018
Accepted manuscript online:
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.60.Jb
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(Light-emitting devices)
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78.40.Fy
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(Semiconductors)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004). |
Corresponding Authors:
Xia Guo, Hua Wu
E-mail: guox@bupt.edu.cn;wh1125@126.com
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Cite this article:
Xia Guo(郭霞), Qiao-Li Liu(刘巧莉), Hui-Jun Tian(田慧军), Chun-Wei Guo(郭春威), Chong Li(李冲), An-Qi Hu(胡安琪), Xiao-Ying He(何晓颖), Hua Wu(武华) Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires 2018 Chin. Phys. B 27 098502
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