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Chin. Phys. B, 2010, Vol. 19(8): 088101    DOI: 10.1088/1674-1056/19/8/088101
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

Sun Guo-Sheng(孙国胜)a)b), Liu Xing-Fang(刘兴昉)a)b), Wang Lei(王雷)b), Zhao Wan-Shun(赵万顺)b),Yang Ting(杨挺)b), Wu Hai-Lei(吴海雷)b), Yan Guo-Guo(闫果果)b), Zhao Yong-Mei(赵永梅)c), Ning Jin(宁瑾)c), Zeng Yi-Ping(曾一平)a)b), and Li Jin-Min(李晋闽)a)b)
a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C–SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C–SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C–SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C–SiC films are obtained to be 6%~7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.
Keywords:  3C–SiC      heteroepitaxial      multi-wafer      uniformity  
Received:  13 November 2009      Revised:  22 December 2009      Accepted manuscript online: 
PACS:  68.55.A- (Nucleation and growth)  
  68.35.B- (Structure of clean surfaces (and surface reconstruction))  
  71.20.Nr (Semiconductor compounds)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  89.20.Bb (Industrial and technological research and development)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702).

Cite this article: 

Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wang Lei(王雷), Zhao Wan-Shun(赵万顺),Yang Ting(杨挺), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Zhao Yong-Mei(赵永梅), Ning Jin(宁瑾), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽) Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates 2010 Chin. Phys. B 19 088101

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