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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates |
Sun Guo-Sheng(孙国胜)a)b)†, Liu Xing-Fang(刘兴昉)a)b), Wang Lei(王雷)b), Zhao Wan-Shun(赵万顺)b),Yang Ting(杨挺)b), Wu Hai-Lei(吴海雷)b), Yan Guo-Guo(闫果果)b), Zhao Yong-Mei(赵永梅)c), Ning Jin(宁瑾)c), Zeng Yi-Ping(曾一平)a)b), and Li Jin-Min(李晋闽)a)b) |
a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C–SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C–SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C–SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C–SiC films are obtained to be 6%~7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.
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Received: 13 November 2009
Revised: 22 December 2009
Accepted manuscript online:
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PACS:
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68.55.A-
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(Nucleation and growth)
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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71.20.Nr
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(Semiconductor compounds)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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89.20.Bb
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(Industrial and technological research and development)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702). |
Cite this article:
Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wang Lei(王雷), Zhao Wan-Shun(赵万顺),Yang Ting(杨挺), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Zhao Yong-Mei(赵永梅), Ning Jin(宁瑾), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽) Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates 2010 Chin. Phys. B 19 088101
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