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AlOx/LiF composite protection layer for Cr-doped (Bi, Sb)2Te3 quantum anomalous Hall films |
Yunbo Ou(欧云波)1, Yang Feng(冯洋)2, Xiao Feng(冯硝)1,2, Zhenqi Hao(郝镇齐)2, Liguo Zhang(张立果)2, Chang Liu(刘畅)2, Yayu Wang(王亚愚)2, Ke He(何珂)2, Xucun Ma(马旭村)2, Qikun Xue(薛其坤)2 |
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China |
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Abstract We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi, Sb)2Te3 topological insulator films with a combination of LiF and AlOx capping layers. The AlOx/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi, Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.
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Received: 03 March 2016
Revised: 26 March 2016
Accepted manuscript online:
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PACS:
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73.50.-h
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(Electronic transport phenomena in thin films)
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03.65.Vf
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(Phases: geometric; dynamic or topological)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11325421). |
Corresponding Authors:
Yayu Wang, Ke He
E-mail: yayuwang@tsinghua.edu.cn;kehe@tsinghua.edu.cn
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Cite this article:
Yunbo Ou(欧云波), Yang Feng(冯洋), Xiao Feng(冯硝), Zhenqi Hao(郝镇齐), Liguo Zhang(张立果), Chang Liu(刘畅), Yayu Wang(王亚愚), Ke He(何珂), Xucun Ma(马旭村), Qikun Xue(薛其坤) AlOx/LiF composite protection layer for Cr-doped (Bi, Sb)2Te3 quantum anomalous Hall films 2016 Chin. Phys. B 25 087307
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