Mechanical properties of GaxIn1-xAsyP1-y/GaAs systemat different temperatures and pressures

doi:10.1088/1674-1056/24/9/094302

Abstract The mechanical properties, such as the elastic constants C₁₁, C₁₂, C₄₄, and bulk, Young's, and shear moduli, of a Ga_xIn_1-xAs_yP_1-y alloy lattice matching to a GaAs substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement, while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.

Keywords: elastic constants temperature and pressure electronic band gaps

Received: 25 January 2015
Revised: 15 March 2015
Accepted manuscript online:

PACS:	43.35.Cg	(Ultrasonic velocity, dispersion, scattering, diffraction, and Attenuation in solids; elastic constants)
	81.40.Vw	(Pressure treatment)
	31.10.+z	(Theory of electronic structure, electronic transitions, and chemical binding)
	42.70.Qs	(Photonic bandgap materials)

Corresponding Authors: E. B. Elkenany
E-mail: kena@mans.edu.eg

Cite this article:

A. R. Degheidy, E. B. Elkenany Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures 2015 Chin. Phys. B 24 094302

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Mechanical properties of GaxIn1-xAsyP1-y/GaAs systemat different temperatures and pressures

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Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures