Mutator for transferring a memristor emulator into meminductive and memcapacitive circuits

doi:10.1088/1674-1056/23/7/070702

Abstract In this paper, a concise but effective interface circuit for transforming a memristor into meminductive and memcapacitive systems is designed. This newly proposed interface circuit, constructed by only two current conveyors, is equipped with three available ports, which can provide six connecting combinations in terms of one resistor, one capacitor, and one memristor. For the sake of confirming the design effectiveness, theoretical and simulation discussions are hence introduced and all the experimental waveforms provide conclusive evidence to validate the correctness of these new mutators. The most attractive features of this new interface circuit are the floating terminals and convenient practical implementation.

Keywords: memristor meminductive memcapacitive self-excited oscillator

Received: 24 December 2013
Revised: 12 January 2014
Accepted manuscript online:

PACS:	07.50.Ek	(Circuits and circuit components)
	84.30.Ng	(Oscillators, pulse generators, and function generators)
	85.25.Hv	(Superconducting logic elements and memory devices; microelectronic circuits)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51307174), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2013QNB28), and the China Postdoctoral Science Foundation (Grant No. 2013M531423).

Corresponding Authors: Yu Dong-Sheng
E-mail: dongsiee@163.com

About author: 07.50.Ek; 84.30.Ng; 85.25.Hv

Cite this article:

Yu Dong-Sheng (于东升), Liang Yan (梁燕), Herbert H. C. Iu, Hu Yi-Hua (胡义华) Mutator for transferring a memristor emulator into meminductive and memcapacitive circuits 2014 Chin. Phys. B 23 070702

[1]	Chua L O 1971 IEEE Trans. Circ. Theory 18 507
[2]	Di Ventra M, Pershin Y V and Chua L O 2009 Proc. IEEE 97 1717
[3]	Pershin Y V and Di Ventra M 2012 Proc. IEEE 100 2071
[4]	Bao B C, Liu Z and Xu J P 2010 Chin. Phys. B 19 030510
[5]	Wang G, Shen Y and Yin Q 2013 Chin. Phys. B 22 050504
[6]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
[7]	RáA and Cserey G 2010 IEEE Trans. Comput. 29 632
[8]	Shin S and Kang S M 2010 IEEE Trans. Comput. 29 590
[9]	Muthuswamy B 2010 Int. J. Bifurc. Chaos 20 1335
[10]	Pershin Y V and Di Ventra M 2010 IEEE Trans. Circ. Syst. I 57 1857
[11]	Batas D and Fiedler H 2011 IEEE Trans. Nanotechnol. 10 250
[12]	Valsa J, Biolek D and Biolek Z 2011 Int. J. Numer. Model El. 24 400
[13]	Kim H, Sah M P, Yang C, Cho S and Chua L O 2012 IEEE Trans. Circ. Syst. I 59 2422
[14]	Wang X Y, Fitch A L, Iu H H C, Sreeram V and Qi W G 2012 Chin. Phys. B 21 108501
[15]	Fang X D, Tang Y H and Wu J J 2012 Chin. Phys. B 21 098901
[16]	Fitch A L, Iu H H C and Tse C K 2012 Hardware Memristor Emulators, in Chaos, CNN, Memristors and Beyond p. 5
[17]	Tian X B and Xu H 2013 Chin. Phys. B 22 088501
[18]	Gohen G Z, Pershin Y V and Di Ventra M 2012 Phys. Rev. B 85 165428
[19]	Martinez-Rincon J, Pershin Y V 2011 IEEE Trans. Electron Devices 58 1809
[20]	Biolek D, Biolek Z and Biolkova V 2009 European Conference on Circuit Theory and Design, Turkey, August 23-27, 2009, p. 249
[21]	Biolek D, Biolek Z and Biolkova V 2011 Radioengineering 20 228
[22]	Biolek D, Biolek Z and Biolkova V 2011 Analog. Integr. Circ. Sig. Process. 66 129
[23]	Biolek D, Biolek Z and Biolkova V 2010 Electron. Lett. 46 520
[24]	Biolek D, Biolkova V and Kolka Z 2010 IEEE Asia Pacific Conference on Circuits and Systems, Malaysia, December 6-9, 2010, p. 800
[25]	Pershin Y V and Di Ventra M 2010 Electron. Lett. 46 517
[26]	Biolek D and Biolkova V 2010 Electron. Lett. 46 1428
[27]	Wang X Y, Fitch A, Iu H H C and Qi W G 2012 Phys. Lett. A 376 394
[28]	Pershin Y V and Di Ventra M 2011 Electron. Lett. 47 243
[29]	Fouda M E and Radwan A G 2012 Electron. Lett. 48 1454
[30]	Liang Y, Yu D S and Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese)
[31]	Yu D S, Liang Y, Chen H and Iu H H C 2013 IEEE Trans. Circ. Syst. Ⅱ 60 207
[32]	Yu D S, Chen H and Iu H H C 2013 International Symposium on Circuits and Systems, China, May 19-23, 2013, p. 1692
[33]	Senani R 1982 Electrocomponent Science and Technology 10 7
[34]	Chua L O and Kang S M 1976 Proc. IEEE 64 209

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Mutator for transferring a memristor emulator into meminductive and memcapacitive circuits

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