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Chin. Phys. B, 2010, Vol. 19(7): 077701    DOI: 10.1088/1674-1056/19/7/077701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The hysteresis loops of a ferroelectric bilayer film with surface transition layers

Cui Lian(崔莲)a), Lü Tian-Quan(吕天全)a)†, Sun Pu-Nan(孙普男)b), and Xue Hui-Jie(薛惠杰)a)
a Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China; b Department of Physics, Heilongjiang University, Harbin 150080, China
Abstract  Based on the transverse Ising model in the framework of the mean field approximation, this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The hysteresis loop of a bilayer film is investigated. The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.
Keywords:  ferroelectric bilayer film      transverse Ising model      hysteresis loops      surface transition layers  
Received:  30 November 2009      Accepted manuscript online: 
PACS:  77.55.+f  
  77.80.Dj (Domain structure; hysteresis)  
  77.80.Bh  

Cite this article: 

Cui Lian(崔莲), Lü Tian-Quan(吕天全), Sun Pu-Nan(孙普男), and Xue Hui-Jie(薛惠杰) The hysteresis loops of a ferroelectric bilayer film with surface transition layers 2010 Chin. Phys. B 19 077701

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