Ferroelectricity in hexagonal YFeO3 film at room temperature

doi:10.1088/1674-1056/24/1/017701

Abstract In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFeO₃ film with hexagonal structure, which was fabricated on Si(111) substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4× 10^-6A/cm² under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P-E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature. The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy, which testifies to the ferroelectricity of the YFeO₃ film further.

Keywords: hexagonal YFeO₃ multiferroic ferroelectricity piezoresponse force microscopy

Received: 04 June 2014
Revised: 25 August 2014
Accepted manuscript online:

PACS:	77.55.Nv	(Multiferroic/magnetoelectric films)
	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
	68.37.Ps	(Atomic force microscopy (AFM))
	73.40.-c	(Electronic transport in interface structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51202195, and 511172183), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20126102110045), and the NPU Foundation for Fundamental Research (Grant Nos. JC201155, JC201271, and JC20120246).

Corresponding Authors: Chen Chang-Le
E-mail: chenchl@nwpu.edu.cn

Cite this article:

Zhang Run-Lan (张润兰), Chen Chang-Le (陈长乐), Zhang Yun-Jie (张云婕), Xing Hui (邢辉), Dong Xiang-Lei (董祥雷), Jin Ke-Xin (金克新) Ferroelectricity in hexagonal YFeO₃ film at room temperature 2015 Chin. Phys. B 24 017701

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Ferroelectricity in hexagonal YFeO3 film at room temperature

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Ferroelectricity in hexagonal YFeO₃ film at room temperature