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Chin. Phys. B, 2014, Vol. 23(9): 098801    DOI: 10.1088/1674-1056/23/9/098801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Structural properties of a-SiOx:H films studied by an improved infrared-transmission analysis method

Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖)
Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China
Abstract  An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared (IR) transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials (a-SiOx:H) are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx:H materials is discussed in detail.
Keywords:  amorphous silicon oxide film      thin thickness      infrared transmission      structural properties  
Received:  05 February 2014      Revised:  18 April 2014      Accepted manuscript online: 
PACS:  88.40.H- (Solar cells (photovoltaics))  
  78.30.-j (Infrared and Raman spectra)  
  78.20.Bh (Theory, models, and numerical simulation)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the National Natural Science Foundation of China (Grant No. 60976051), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).
Corresponding Authors:  Zhao Ying     E-mail:  zhaoygds@nankai.edu.cn

Cite this article: 

Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖) Structural properties of a-SiOx:H films studied by an improved infrared-transmission analysis method 2014 Chin. Phys. B 23 098801

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