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Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering |
Gao Xiao-Yong (郜小勇), Chen Chao (陈超), Zhang Sa (张飒) |
School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China |
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Abstract A series of <103>-oriented aluminum-doped zinc oxide (AZO) films were deposited on glass substrates via direct-current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios (GFRs). The optical properties of the films were characterized using the fitted optical constants in the general oscillator model (which contains two Psemi-Tri oscillators) through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single-oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The photoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.
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Received: 07 June 2013
Revised: 04 September 2013
Accepted manuscript online:
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PACS:
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07.60.Fs
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(Polarimeters and ellipsometers)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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77.55.hf
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(ZnO)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60807001), the Foundation of Young Key Teachers from University of Henan Province, China (Grant No. 2011GGJS-008), the Foundation of Graduate Education Support of Zhengzhou University, China, and the Foundation of Graduate Innovation of Zhengzhou University, China (Grant No. 12L00104). |
Corresponding Authors:
Gao Xiao-Yong
E-mail: xygao@zzu.edu.cn
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Cite this article:
Gao Xiao-Yong (郜小勇), Chen Chao (陈超), Zhang Sa (张飒) Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering 2014 Chin. Phys. B 23 030701
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