Please wait a minute...
Chin. Phys. B
 

Magnetization and magnetrotransport properties of Ni doped PrFeO3 thin films

University of Kashmir
Abstract  Present study reports the Magnetization and magnetrotransport properties of PrFe1-xNixO3 thin films grown by pulsed laser ablation technique on a LaAlO3 substrate. From DC M/H plots of these films, weak ferromagnetism or ferrimagnetism behavior are observed. With Ni substitution, reduction in saturation magnetization is also seen. With Ni doping, a variation in saturation field (Hs), coercive filed (Hc), Weiss temperature (?) and effective magnetic moment (peff) are seen. A small change of magnetroresitance with application of higher filed is observed. Various essential parameters like density of state (Nf) at Fermi level, Mott’s characteristic temperature (T0) and activation energy (Ea) in presence and in absence of magnetic field were calculated. The present observed magnetic properties are related to the change of Fe-O bond length (causing an overlap between the oxygen p orbital and iron d orbital) and as well as deviation of the Fe–O–Fe angle from 180°. Reduction of magnetic domains after Ni doping is also explored to explain the present observed magnetic behavior of the system. The impact on various transport properties in these thin films after doping indicates a distortion in the lattice structure and consequently on influence on single particle band width, due to stress-induced reduction in unit cell volume.
Keywords:  Thin films     
Received:  13 May 2013      Published:  07 November 2013

Cite this article: 

Magnetization and magnetrotransport properties of Ni doped PrFeO3 thin films Chin. Phys. B 0

[1] Structural and optical characteristic features of RF sputtered CdS/ZnO thin films
Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Chin. Phys. B, 2020, 29(8): 080702.
[2] Thermal stability of magnetron sputtering Ge-Ga-S films
Lei Niu(牛磊), Yimin Chen(陈益敏), Xiang Shen(沈祥), Tiefeng Xu(徐铁峰). Chin. Phys. B, 2020, 29(8): 087803.
[3] Optical and electrical properties of InGaZnON thin films
Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平). Chin. Phys. B, 2020, 29(1): 018105.
[4] Influence of low-temperature sulfidation on the structure of ZnS thin films
Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚). Chin. Phys. B, 2019, 28(2): 024214.
[5] Electrical transport and optical properties of Cd3As2 thin films
Yun-Kun Yang(杨运坤), Fa-Xian Xiu(修发贤), Feng-Qiu Wang(王枫秋), Jun Wang(王军), Yi Shi(施毅). Chin. Phys. B, 2019, 28(10): 107502.
[6] Thickness dependent manipulation of uniaxial magnetic anisotropy in Fe-thin films by oblique deposition
Qeemat Gul, Wei He(何为), Yan Li(李岩), Rui Sun(孙瑞), Na Li(李娜), Xu Yang(杨旭), Yang Li(李阳), Zi-Zhao Gong(弓子召), ZongKai Xie(谢宗凯), Xiang-Qun Zhang(张向群), Zhao-Hua Cheng(成昭华). Chin. Phys. B, 2018, 27(9): 097504.
[7] Variable angle spectroscopic ellipsometry and its applications in determining optical constants of chalcogenide glasses in infrared
Ning-Ning Wei(韦宁宁), Zhen Yang(杨振), Hong-Bo Pan(潘宏波), Fan Zhang(张凡), Yong-Xing Liu(刘永兴), Rong-Ping Wang(王荣平), Xiang Shen(沈祥), Shi-Xun Dai(戴世勋), Qiu-Hua Nie(聂秋华). Chin. Phys. B, 2018, 27(6): 067802.
[8] Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry
Ze-Song Wang(王泽松), Ren-Zheng Xiao(肖仁政), Chang-Wei Zou(邹长伟), Wei Xie(谢伟), Can-Xin Tian(田灿鑫), Shu-Wen Xue(薛书文), Gui-Ang Liu(刘贵昂), Neena Devi, De-Jun Fu(付德君). Chin. Phys. B, 2018, 27(4): 047901.
[9] Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures
Hao-Nan Liu(刘浩男), Xiao-Xia Suo(索晓霞), Lin-Ao Zhang(张林奥), Duan Zhang(张端), Han-Chun Wu(吴汉春), Hong-Kang Zhao(赵宏康), Zhao-Tan Jiang(江兆潭), Ying-Lan Li(李英兰), Zhi Wang(王志). Chin. Phys. B, 2018, 27(2): 027104.
[10] Thin film dynamics in coating problems using Onsager principle
Yana Di(邸亚娜), Xianmin Xu(许现民), Jiajia Zhou(周嘉嘉), Masao Doi. Chin. Phys. B, 2018, 27(2): 024501.
[11] Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer
Mehdi Ahmadi, Sajjad Rashidi Dafeh, Samaneh Ghazanfarpour, Mohammad Khanzadeh. Chin. Phys. B, 2017, 26(9): 097203.
[12] Low temperature ferromagnetic properties of CdS and CdTe thin films
Hafiz Tariq Masood, Zahir Muhammad, Muhammad Habib, Dong-Ming Wang(王东明), De-Liang Wang(王德亮). Chin. Phys. B, 2017, 26(6): 067503.
[13] Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering
Ming-Wei Gao(高明伟), Chao Ye(叶超), Xiang-Ying Wang(王响英), Yi-Song He(何一松), Jia-Min Guo(郭佳敏), Pei-Fang Yang(杨培芳). Chin. Phys. B, 2016, 25(7): 075202.
[14] Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films
H M Zeyada, F M El-Taweel, M M El-Nahass, M M El-Shabaan. Chin. Phys. B, 2016, 25(7): 077701.
[15] Alternating current characterization of nano-Pt(II) octaethylporphyrin (PtOEP) thin film as a new organic semiconductor
M Dongol, M M El-Nahass, A El-Denglawey, A A Abuelwafa, T Soga. Chin. Phys. B, 2016, 25(6): 067201.
No Suggested Reading articles found!