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Chin. Phys. B, 2018, Vol. 27(4): 047901    DOI: 10.1088/1674-1056/27/4/047901
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry

Ze-Song Wang(王泽松)1, Ren-Zheng Xiao(肖仁政)2, Chang-Wei Zou(邹长伟)1, Wei Xie(谢伟)1, Can-Xin Tian(田灿鑫)1, Shu-Wen Xue(薛书文)1, Gui-Ang Liu(刘贵昂)1, Neena Devi3, De-Jun Fu(付德君)3
1. School of Physics and Technology, Lingnan Normal University, Zhanjiang 524048, China;
2. College of Mechanical and Power Engineering, Three Gorges University, Yichang 443002, China;
3. Key Laboratory of Artificial Micro-and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Abstract  BiFeO3 is a multiferroic material with physical properties very sensitive to its stoichiometry. BiFeO3 thin films on silicon substrate are prepared by the sol-gel method combined with layer-by-layer annealing and final annealing schemes. X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies. Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO3 thin films annealed at 100℃-650℃. The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO3, whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10-5 A/cm2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO3 thin films annealed at high temperature.
Keywords:  BiFeO3 thin films      off-stoichiometry      high temperature annealing      backscattering spectrometry  
Received:  26 September 2017      Revised:  12 January 2018      Accepted manuscript online: 
PACS:  79.77.+g (Coulomb explosion)  
  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  25.60.Dz (Interaction and reaction cross sections)  
  82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11605103, 11405117, and 11747074), the Guangdong Provincial Natural Science Foundation, China (Grant Nos. 2014A030307008 and 2016A030313670), and the Guangdong Provincial Science and Technology Planning Project, China (Grant Nos. 2016A010103041 and 2017A010103025).
Corresponding Authors:  Ze-Song Wang     E-mail:  zswang@lingnan.edu.cn

Cite this article: 

Ze-Song Wang(王泽松), Ren-Zheng Xiao(肖仁政), Chang-Wei Zou(邹长伟), Wei Xie(谢伟), Can-Xin Tian(田灿鑫), Shu-Wen Xue(薛书文), Gui-Ang Liu(刘贵昂), Neena Devi, De-Jun Fu(付德君) Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry 2018 Chin. Phys. B 27 047901

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