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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC |
Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination of xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Strong photoelectrical response makes it promising for optoelectronic applications.
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Received: 18 February 2013
Revised: 27 February 2013
Accepted manuscript online:
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PACS:
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68.65.Pq
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(Graphene films)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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78.67.Wj
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(Optical properties of graphene)
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Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0291), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041). |
Corresponding Authors:
Chen Yuan-Fu
E-mail: yfchen@uestc.edu.cn
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Cite this article:
Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣) Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC 2013 Chin. Phys. B 22 076804
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