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Chin. Phys. B, 2013, Vol. 22(7): 076804    DOI: 10.1088/1674-1056/22/7/076804
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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination of xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Strong photoelectrical response makes it promising for optoelectronic applications.
Keywords:  epitaxial graphene      photoelectrical response      oxygen absorption  
Received:  18 February 2013      Revised:  27 February 2013      Accepted manuscript online: 
PACS:  68.65.Pq (Graphene films)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  78.67.Wj (Optical properties of graphene)  
Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0291), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041).
Corresponding Authors:  Chen Yuan-Fu     E-mail:  yfchen@uestc.edu.cn

Cite this article: 

Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣) Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC 2013 Chin. Phys. B 22 076804

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