Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

doi:10.1088/1674-1056/22/5/058502

Abstract P-InGaN/p-GaN superlattices (SLs) are developed for hole accumulation layer (HAL) of blue light emitting diode (LED). Free hole concentration as high as 2.6×10¹⁸ cm^-3 is achieved by adjusting the Cp₂Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp₂Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhanced light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Keywords: light emitting diodes hole accumulation layer efficiency droop

Received: 25 October 2012
Revised: 02 February 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

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Liu Chao (刘超), Ren Zhi-Wei (任志伟), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Yin Yi-An (尹以安), Li Shu-Ti (李述体) Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer 2013 Chin. Phys. B 22 058502

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Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

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