Abstract P-InGaN/p-GaN superlattices (SLs) are developed for hole accumulation layer (HAL) of blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhanced light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.
Progress and prospects of GaN-based LEDs using nanostructures Zhao Li-Xia (赵丽霞), Yu Zhi-Guo (于治国), Sun Bo (孙波), Zhu Shi-Chao (朱石超), An Ping-Bo (安平博), Yang Chao (杨超), Liu Lei (刘磊), Wang Jun-Xi (王军喜), Li Jin-Min (李晋闽). Chin. Phys. B, 2015, 24(6): 068506.
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