Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region

doi:10.1088/1674-1056/22/5/058501

Abstract By solving 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previously experimental results, confirming the validity of the models presented here.

Keywords: surface electric field breakdown voltage optimization

Received: 10 October 2012
Revised: 10 December 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	84.70.+p	(High-current and high-voltage technology: power systems; power transmission lines and cables)

Fund: Projects supported by the National Natural Science Foundation of China (Grant No. 61076073), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 09KJB510010), the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201011), and the Research and Innovation Project for College Graduates of Jiangsu Province, China (Grant No. CXZZ11_0382).

Corresponding Authors: Guo Yu-Feng
E-mail: yfguo@njupt.edu.cn

Cite this article:

Hua Ting-Ting (花婷婷), Guo Yu-Feng (郭宇锋), Yu Ying (于映), Gene Sheu, Jian Tong (蹇彤), Yao Jia-Fei (姚佳飞) Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region 2013 Chin. Phys. B 22 058501

[1]	Apples J, Vaes H and Verhoeven J 1979 Proc. IEDM p. 238
[2]	Erlbacher T, Bauer A and Frey L 2010 IEEE Electron Dev. Lett. 31 464
[3]	Ludikhuize A 2000 Proc. ISPSD p. 11
[4]	Vestling L, Olsson J and Eklund K 2002 Solid-State Electron 46 1177
[5]	Chung S and Han S 1998 IEEE Trans. Electron Dev. 45 1374
[6]	He J and Zhang X 2001 Microelectronics Journal 32 655
[7]	Li Q, Zhang B and Li Z J 2007 Research and Progress of SSE 27 540 (in Chinese)
[8]	Li Q, Zhang B and Li Z J 2008 Acta Phys. Sin. 57 1891 (in Chinese)
[9]	Hu X R, Zhang B, Luo X R, Wang Y G, Lei T F and Li Z J 2012 Chin. Phys. B 21 78502
[10]	Sun W F and Shi L X 2004 Solid-State Electron 48 799
[11]	Meng J, Gao S and Chen J N 2005 Journal of Semiconductors 26 1383 (in Chinese)
[12]	Wu J, Fang J, Zhang B and Li Z J 2004 Proc. ICSICT p. 349
[13]	Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X and Wei J 2012 Chin. Phys. B 21 68501
[14]	Hua T T, Guo Y F and Sheu G 2010 Proc. ICSICT p. 1850
[15]	Disney D, Paul A, Darwish M, Basecki R and Rumennik V 2001 Proc. ISPSD p. 399
[16]	Sheu G, Yang S M, Chang Y F and Tsaur S C 2010 Jpn. J. Appl. Phys. 49 074301
[17]	Sheu G, Lin Y H, Tseng W C, Yang S M, Chen C N and Guo Y F 2010 ECS Transactions on Design and Device Engineering 27 103
[18]	Lu S L, Sun Z L, Sun W F and Shi L X 2005 Chinese Journal of Semiconductors 26 2286
[19]	Han S, Kim H and Chung S 2000 Microelectronics Journal 31 685
[20]	Li Q, Zhu J L, Wang W D and Wei X M 2011 Chin. Phys. B 20 117202
[21]	Qiao M, Zhuang X, Wu L J, Zhang W T, Wen H J, Zhang B and Li Z J 2012 Chin. Phys. B 21 108502
[22]	Hu S D, Zhang B and Li Z J 2009 Chin. Phys. B 18 315
[23]	Colak S 1981 IEEE Trans. Electron Dev. 28 1455
[24]	Wildi E, Gray P, Chow T, Chang H and Cornell M 1982 IEDM Tech. Dig. p. 268

[1]	Performance optimization on finite-time quantum Carnot engines and refrigerators based on spin-1/2 systems driven by a squeezed reservoir Haoguang Liu(刘浩广), Jizhou He(何济洲), and Jianhui Wang(王建辉). Chin. Phys. B, 2023, 32(3): 030503.
[2]	Comparison of differential evolution, particle swarm optimization, quantum-behaved particle swarm optimization, and quantum evolutionary algorithm for preparation of quantum states Xin Cheng(程鑫), Xiu-Juan Lu(鲁秀娟), Ya-Nan Liu(刘亚楠), and Sen Kuang(匡森). Chin. Phys. B, 2023, 32(2): 020202.
[3]	Traffic flow of connected and automated vehicles at lane drop on two-lane highway: An optimization-based control algorithm versus a heuristic rules-based algorithm Huaqing Liu(刘华清), Rui Jiang(姜锐), Junfang Tian(田钧方), and Kaixuan Zhu(朱凯旋). Chin. Phys. B, 2023, 32(1): 014501.
[4]	Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[5]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[6]	Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Chin. Phys. B, 2022, 31(4): 047302.
[7]	Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Chin. Phys. B, 2022, 31(4): 047304.
[8]	Modeling of high permittivity insulator structure with interface charge by charge compensation Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Chin. Phys. B, 2022, 31(2): 028501.
[9]	Thermal apoptosis analysis considering injection behavior optimization and mass diffusion during magnetic hyperthermia Yun-Dong Tang(汤云东), Jian Zou(邹建), Rodolfo C C Flesch(鲁道夫 C C 弗莱施), Tao Jin(金涛), and Ming-Hua He(何明华). Chin. Phys. B, 2022, 31(1): 014401.
[10]	Probing structural and electronic properties of divalent metal Mg_n+1 and SrMg_n (n = 2–12) clusters and their anions Song-Guo Xi(奚松国), Qing-Yang Li(李青阳), Yan-Fei Hu(胡燕飞), Yu-Quan Yuan(袁玉全), Ya-Ru Zhao(赵亚儒), Jun-Jie Yuan(袁俊杰), Meng-Chun Li(李孟春), and Yu-Jie Yang(杨雨杰). Chin. Phys. B, 2022, 31(1): 016106.
[11]	Topology optimization method of metamaterials design for efficient enhanced transmission through arbitrary-shaped sub-wavelength aperture Pengfei Shi(史鹏飞), Yangyang Cao(曹阳阳), Hongge Zhao(赵宏革), Renjing Gao(高仁璟), and Shutian Liu(刘书田). Chin. Phys. B, 2021, 30(9): 097806.
[12]	Erratum to “Designing thermal demultiplexer: Splitting phonons by negative mass and genetic algorithm optimization” Yu-Tao Tan(谭宇涛), Lu-Qin Wang(王鲁钦), Zi Wang(王子), Jiebin Peng(彭洁彬), and Jie Ren(任捷). Chin. Phys. B, 2021, 30(9): 099902.
[13]	Large-area fabrication: The next target of perovskite light-emitting diodes Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Chin. Phys. B, 2021, 30(8): 088502.
[14]	Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰). Chin. Phys. B, 2021, 30(6): 067303.
[15]	Design and simulation of AlN-based vertical Schottky barrier diodes Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(6): 067305.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region

Cite this article:

Online attention