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Chin. Phys. B, 2013, Vol. 22(4): 047304    DOI: 10.1088/1674-1056/22/4/047304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

Lei Xiao-Yi (雷晓艺)a, Liu Hong-Xia (刘红侠)a, Zhang Kai (张凯)a, Zhang Yue (张月)a, Zheng Xue-Feng (郑雪峰)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a
a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies,School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China
Abstract  The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (Vd) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.
Keywords:  pMOSFETs      hot carrier effect (HCE)      degradation      lifetime modeling  
Received:  12 September 2012      Revised:  22 October 2012      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).
Corresponding Authors:  Lei Xiao-Yi     E-mail:  lydialeixy@163.com

Cite this article: 

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Kai (张凯), Zhang Yue (张月), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET 2013 Chin. Phys. B 22 047304

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