Electron inelastic mean free paths in solids: A theoretical approach

doi:10.1088/1674-1056/21/9/093402

Abstract In the present paper, the inelastic mean free path (IMFP) of incident electrons is calculated as a function of energy for silicon (Si), oxides of silicon (SiO₂), SiO, and Al₂O₃ in bulk form by employing atomic/molecular inelastic cross sections derived by semi-empirical quantum mechanical method developed earlier. A general agreement of the present results is found with the most of the available data. It is of great importance that we have been able to estimate the minimum IMFP which corresponds to the peak of inelastic interactions of incident electrons in each solid investigated. New results are presented for SiO for which no comparison is available. The present work is important in view of the lack of experimental data on IMFP in solids.

Keywords: electron inelastic mean free path complex potential inelastic electron scattering cross sections solids

Received: 15 September 2012
Accepted manuscript online:

PACS:	34.80.Dp	(Atomic excitation and ionization)
	34.80.Gs	(Molecular excitation and ionization)
	34.80.Ht	(Dissociation and dissociative attachment)
	72.15.Lh	(Relaxation times and mean free paths)

Fund: Project supported by the Indian Space Research Organization through Respond Project (Grant No. ISRO/RES/2/356/10-11).

Corresponding Authors: Siddharth H. Pandya
E-mail: siddharth033@gmail.com

Cite this article:

Siddharth H. Pandya, B. G. Vaishnav, K. N. Joshipura Electron inelastic mean free paths in solids: A theoretical approach 2012 Chin. Phys. B 21 093402

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