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Magnetic anisotropy and magnetization reversal of ultrathin iron films with in-plane magnetization on Si(111) substrates |
Liu Hao-Liang(刘郝亮), He Wei(何为), Du Hai-Feng(杜海峰), Fang Ya-Peng(房亚鹏), Wu Qiong(吴琼), Zhang Xiang-Qun(张向群), Yang Hai-Tao(杨海涛), and Cheng Zhao-Hua(成昭华)† |
State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer (ML) grown on Si(111) have been investigated by ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM). Owing to the significant modification of the energy surface in remanent state by slight misorientation from (111) plane and a uniaxial magnetic anisotropy, the azimuthal angular dependence of in-plane resonance field shows a six-fold symmetry with a weak uniaxial contribution, while the remanence of hysteresis loops displays a two-fold one. The competition between the first and second magnetocrystalline anisotropies may result in the switching of in-plane easy axis of the system. Combining the FMR and VSM measurements, the magnetization reversal mechanism has also been determined.
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Received: 19 March 2012
Revised: 09 April 2012
Accepted manuscript online:
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PACS:
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75.30.Gw
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(Magnetic anisotropy)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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68.55.-a
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(Thin film structure and morphology)
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Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB929201, 2010CB934202, and 2011CB921801) and the National Natural Science Foundation of China (Grant Nos. 50931006, 11034004, and 51021061). |
Corresponding Authors:
Cheng Zhao-Hua
E-mail: zhcheng@iphy.ac.cn
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Cite this article:
Liu Hao-Liang(刘郝亮), He Wei(何为), Du Hai-Feng(杜海峰), Fang Ya-Peng(房亚鹏), Wu Qiong(吴琼), Zhang Xiang-Qun(张向群), Yang Hai-Tao(杨海涛), and Cheng Zhao-Hua(成昭华) Magnetic anisotropy and magnetization reversal of ultrathin iron films with in-plane magnetization on Si(111) substrates 2012 Chin. Phys. B 21 077503
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