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Chin. Phys. B, 2009, Vol. 18(10): 4511-4514    DOI: 10.1088/1674-1056/18/10/068
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Great enhancement in remnant polarization of SrBi4Ti4O15 thin films by A-site doping of Fe3+ ions

Sun Jia-Bao(孙家宝), Sun Hui(孙慧), Wang Wei(王伟), Cai Hua(蔡华), and Chen Xiao-Bing(陈小兵)
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China
Abstract  SrBi4-xFexTi4O15 (SBFT-x) thin films (x =0.00, 0.05, 0.08, 0.15) have been synthesized on Pt/Ti/SiO2/Si (100) substrates by sol-gel method. This paper finds that Fe-doping does not change the crystal structure of SrBi4Ti4O15 (SBTi). The coercive filed (Ec) and remnant polarisation (Pr) increase at first, then decrease with the increase of Fe doping content. At a maximum applied field of 229 kV/cm, the 2Pr reaches a maximum value of 91.1 μC/cm2 at x = 0.05 and the corresponding Ec is 72 kV/cm. The 2Pr increases by about 260% and the Ec decreases by about 6%, respectively. Obviously, the ferroelectric property of SrBi4Ti4O15 is greatly enhanced by Fe doping. The fatigue-endurance characteristic of the SBFT-0.05 is not improved. After 1.1×109 read/write cycles at a frequency of 50 kHz, the nonvolatile polarisations (Pnv= P*- PΛ) decreased about 48% of its initial value.
Keywords:  thin films      remnant polarisation      ferroelectrics      fatigue  
Received:  30 September 2008      Revised:  12 March 2009      Accepted manuscript online: 
PACS:  77.55.+f  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  77.22.Ej (Polarization and depolarization)  
  77.80.Dj (Domain structure; hysteresis)  
  77.84.Dy  
  81.15.Lm (Liquid phase epitaxy; deposition from liquid phases (melts, solutions, And surface layers on liquids))  

Cite this article: 

Sun Jia-Bao(孙家宝), Sun Hui(孙慧), Wang Wei(王伟), Cai Hua(蔡华), and Chen Xiao-Bing(陈小兵) Great enhancement in remnant polarization of SrBi4Ti4O15 thin films by A-site doping of Fe3+ ions 2009 Chin. Phys. B 18 4511

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