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Chin. Phys. B, 2009, Vol. 18(10): 4292-4297    DOI: 10.1088/1674-1056/18/10/033
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

Experimental study on microdeposition of the copper thin film by femtosecond laser-induced forward transfer

Yang Li(杨丽)a)b)† and Wang Ching-Yue(王清月)b)
a Civil Aviation University of China, Tianjin 300300, China; b Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, and Laboratory of Optoelectronic Information Technical Science, EMC, Tianjin 300072, China
Abstract  The morphologies of the deposited dots on the 40 nm-thick copper film by the femtosecond laser-induced forward transfer that depend on the irradiated laser fluence have been studied, and the variations of orderliness of the diameter of deposited dots on the quartz substrate and forward ablated dot on the donor substrate with increasing pulse fluence have been obtained experimentally. The experimental results show that a thinner copper film would generate larger-sized ablated dot and deposited dot at the threshold fluence for transfer. By x-ray diffraction measurement, it is demonstrated that the crystal form of the transferred copper films is unaltered and the size of the crystallites is diminished.
Keywords:  femtosecond laser      laser-induced forward transfer      thin film      ablation      deposition  
Received:  29 March 2009      Revised:  07 June 2009      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  78.47.-p (Spectroscopy of solid state dynamics)  
  81.15.Fg (Pulsed laser ablation deposition)  
Fund: Project supported by the Key Grant Project of the Ministry of Education of the People's Republic of China (Grant No 10410), National Natural Science Fundation of China (Grant No 60572168) and Science Research Start-up Fund of Civil Aviation University of

Cite this article: 

Yang Li(杨丽) and Wang Ching-Yue(王清月) Experimental study on microdeposition of the copper thin film by femtosecond laser-induced forward transfer 2009 Chin. Phys. B 18 4292

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