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Chin. Phys. B, 2009, Vol. 18(1): 333-338    DOI: 10.1088/1674-1056/18/1/054
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Industrial diamonds grown in Ni70Mn25Co5--graphite--sulfur system under HPHT

Zhou Lin(周林)a)b), Jia Xiao-Peng(贾晓鹏)a)c), Ma Hong-An(马红安)a)c)†, Zheng You-Jin(郑友进)a), and Li Yan-Tao(李彦涛)a)
a National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; b Physics Department, Heilongjiang University, Harbin 150080, China; c Henan Polytechnic University, Jiaozuo 454000, China
Abstract  This paper reports that diamond single crystals were synthesized from sulfur-added Ni70Mn25Co5+C system under high pressure and high temperature (HPHT). It was found that additive sulfur had inhibited the nucleation and growth of diamond to some extent. X-ray diffraction of the collected sample indicated that under the synthesis conditions, a new compound MnS had been formed through the reaction of additive sulfur with manganese in the catalyst. The MnS has a fcc structure, and its average crystal size was about 30 nm. By scanning electron microscope, the {111} surface of diamond was found to be flat, while there was usually a large depression on the central region of {100}. Further observation showed that there were many small upside-down pyramidal pits in the expression. The results of x-ray photoelectron spectroscopy shows that MnS can only be detected in the depression in the range of detection precision. It was inferred that MnS had been dissolved in the melted alloy during the growth experiment, and precipitated in the sequent quenching process.
Keywords:  sulfur      diamond      morphology      MnS  
Received:  04 May 2008      Revised:  04 June 2008      Accepted manuscript online: 
PACS:  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  61.05.cp (X-ray diffraction)  
  62.50.-p (High-pressure effects in solids and liquids)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  79.60.Bm (Clean metal, semiconductor, and insulator surfaces)  

Cite this article: 

Zhou Lin(周林), Jia Xiao-Peng(贾晓鹏), Ma Hong-An(马红安), Zheng You-Jin(郑友进), and Li Yan-Tao(李彦涛) Industrial diamonds grown in Ni70Mn25Co5--graphite--sulfur system under HPHT 2009 Chin. Phys. B 18 333

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