Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(12): 4622-4626    DOI: 10.1088/1674-1056/17/12/048
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A new physics-based self-heating effect model for 4H-SiC MESFETs

Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.
Keywords:  4H silicon carbide      metal semiconductor field effect transistor      self-heating effect      computer aided design  
Received:  12 November 2007      Revised:  17 July 2008      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
  72.80.Jc (Other crystalline inorganic semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Defense Foundation of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No 60606022).

Cite this article: 

Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) A new physics-based self-heating effect model for 4H-SiC MESFETs 2008 Chin. Phys. B 17 4622

[1] Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(1): 017303.
[2] A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT
Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖). Chin. Phys. B, 2016, 25(12): 124401.
[3] Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平). Chin. Phys. B, 2013, 22(4): 047701.
[4] Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chai ChangChun(柴常春), Song Kun(宋坤), and Chen-Bin(陈斌) . Chin. Phys. B, 2012, 21(3): 037303.
[5] New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤) . Chin. Phys. B, 2012, 21(1): 017201.
[6] Compound buried layer SOI high voltage device with a step buried oxide
Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi(陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融) . Chin. Phys. B, 2011, 20(7): 077304.
[7] Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) . Chin. Phys. B, 2011, 20(2): 027202.
[8] Partial-SOI high voltage P-channel LDMOS with interface accumulation holes
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基). Chin. Phys. B, 2011, 20(10): 107101.
[9] A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Luo Xiao-Rong(罗小蓉). Chin. Phys. B, 2010, 19(3): 037303.
[10] Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃). Chin. Phys. B, 2010, 19(12): 127303.
[11] Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新). Chin. Phys. B, 2009, 18(10): 4456-4459.
No Suggested Reading articles found!