Abstract A two-dimensional (2D) photonic crystal waveguide in the $\varGamma$--$K$ direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.
Received: 14 December 2006
Revised: 09 January 2007
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 60336010 and
60537010).
Cite this article:
Tang Hai-Xia(唐海侠), Zuo Yu-Hua(左玉华), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) A photonic crystal waveguide with silicon on insulator in the near-infrared band 2007 Chinese Physics 16 2011
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