Determination of conduction band edge characteristics of strained Si/Si1-xGex
Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses ($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.
Accepted manuscript online:
PACS:
73.20.At
(Surface states, band structure, electron density of states)
(Fermi surface: calculations and measurements; effective mass, g factor)
Fund: Project supported by the
National Defence Pre-research Foundation of China (Grant
Nos~51308040203 and 51408061105DZ0171).
Cite this article:
Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜) Determination of conduction band edge characteristics of strained Si/Si1-xGex 2007 Chinese Physics 16 3827
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
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