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Chinese Physics, 2006, Vol. 15(9): 2142-2145    DOI: 10.1088/1009-1963/15/9/039
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
Microelectronic School, Xidian University, Xi'an 710071, China, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract  The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance $\rho$c as low as 8.64×10-6$\Omega\cdot$ cm2 is achieved after annealing in N2 at 900℃ for 5 min. The sheet resistance Rsh of the implanted layers is 975$\Omega/\Box$. X-ray diffraction (XRD) analysis shows the formation of Ti-3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.
Keywords:  ohmic contact      silicon carbide      specific contact resistance      P+ ion implantation  
Received:  11 April 2006      Revised:  02 June 2006      Accepted manuscript online: 
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Mi (Dynamical laser instabilities; noisy laser behavior)  
  42.79.Sz (Optical communication systems, multiplexers, and demultiplexers?)  
  42.81.Dp (Propagation, scattering, and losses; solitons)  
  42.50.Lc (Quantum fluctuations, quantum noise, and quantum jumps)  
  42.60.Fc (Modulation, tuning, and mode locking)  
Fund: Project supported by the National Basic Research Program of China (Grant No 2002CB311904), the National Defense\linebreak \makebox[1.6mm]{}Basic Research Program of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No\linebreak \makebox[1.6mm]{}60376001).

Cite this article: 

Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation 2006 Chinese Physics 15 2142

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