Abstract CIGS thin films are deposited by sputtering and selenization. The synthesis of semiconducting polycrystalline thin films and characteristics of devices based on the CIGS absorbing layers are investigated. Their microstructures are characterized by x-ray diffraction and Raman spectroscopy. The results reveal that there exist metallic Cu2-xSe compounds in CIGS film surfaces and the compounds are thought to be responsible for the degradation of the open circuit voltage of solar cells. The optimization of selenization temperature profile and copper content in the precursor surfaces is studied, concluding that the conversion efficiency may be improved by removing metallic Cu2-xSe compounds from the surfaces of CIGS thin films.
Received: 02 June 2005
Revised: 20 January 2006
Accepted manuscript online:
PACS:
84.60.Bk
(Performance characteristics of energy conversion systems; figure of merit)
Li Wei (李伟), Sun Yun (孙云), Liu Wei (刘伟), Li Feng-Yan (李风岩), Zhou Lin (周琳) Improvement in efficiency of solar cell by removing Cu2-xSe from CIGS film surface 2006 Chinese Physics 15 878
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