Adsorption and diffusion of Si adatom near single-layer steps on Si surface
Zhu Xiao-Yan (朱晓焱)ab, Huang Yan (黄燕)b
a Department of Physics, Suzhou University, Suzhou 215006, Chinab National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract By use of the empirical tight-binding (ETB) method, the adsorption and diffusion behaviours of single silicon adatom on the reconstructed Si(100) surface with single-layer steps are simulated. The adsorption energies around the SA step, nonrebonded SB step, rebonded SB step, and rough SB step with a kink structure are specially mapped out in this paper,from which the favourable binding sites and several possible diffusion paths are achieved. Because of the rebonded and kink structures, the SB step is more suitable for the attachment of Si adatom than the SA step or defective surface.
Received: 03 December 2004
Revised: 27 June 2005
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10374069) and the National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No 200412).
Cite this article:
Zhu Xiao-Yan (朱晓焱), Huang Yan (黄燕) Adsorption and diffusion of Si adatom near single-layer steps on Si surface 2005 Chinese Physics 14 2083
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