Raman properties of GaSb nanoparticles embedded in SiO2 films
Liu Fa-Min (刘发民)a, Wang Tian-Min (王天民)a, Zhang Li-De (张立德)b
a Department of Applied Physics, Centre of Materials Physics and Chemistry, School of Science, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; b Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Abstract The Raman shifts of nanocrystalline GaSb excited by an Ar^{+} ion laser at wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.
Received: 04 March 2004
Revised: 23 June 2004
Accepted manuscript online:
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